Výsledky vyhledávání - "Matsubara, Masahiko"

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A first-principles study of carbon-related energy levels in GaN: Part II - Complexes formed by carbon and hydrogen, silicon or oxygen

Autor: Matsubara, Masahiko, Bellotti, Enrico

Publikováno v: Journal of Applied Physics 121, 195702 (2017)

This work presents an in-depth investigation of the properties of complexes composed of hydrogen, silicon or oxygen with carbon, which are major unintentional impurities in undoped GaN. This manuscript is a complement to our previous work on carbon--

Externí odkaz: http://arxiv.org/abs/1706.05574

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Doping anatase TiO2 with group V-b and VI-b transition metal atoms: a hybrid functional first-principles study

Autor: Matsubara, Masahiko, Saniz, Rolando, Partoens, Bart, Lamoen, Dirk

Publikováno v: Physical Chemistry Chemical Physics 19, 1945 (2017)

We investigate the role of transition metal atoms of group V-b (V, Nb, and Ta) and VI-b (Cr, Mo, and W) as n- or p-type dopants in anatase TiO2 using thermodynamic principles and density functional theory with the Heyd-Scuseria-Ernzerhof HSE06 hybrid

Externí odkaz: http://arxiv.org/abs/1702.06039

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A first-principles study of carbon-related energy levels in GaN. Part I - complexes formed by substitutional/interstitial carbons and gallium/nitrogen vacancies

Autor: Matsubara, Masahiko, Bellotti, Enrico

Publikováno v: Journal of Applied Physics 121, 195701 (2017)

Various forms of carbon based complexes in GaN are studied with first-principles calculations employing Heyd-Scuseria-Ernzerhof hybrid functional within the framework of density functional theory. We consider carbon complexes made of the combinations

Externí odkaz: http://arxiv.org/abs/1507.06969

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Comment on 'Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop' [Phys. Rev. Lett. 110, 177406 (2013)]

Autor: Bertazzi, Francesco, Goano, Michele, Zhou, Xiangyu, Calciati, Marco, Ghione, Giovanni, Matsubara, Masahiko, Bellotti, Enrico

In a recent letter [Phys. Rev. Lett. 110, 177406 (2013)], presenting a spectroscopic study of the electrons emitted from the GaN p-cap of a forward-biased InGaN/GaN light-emitting diode (LED), the authors observed at least two distinct peaks in the e

Externí odkaz: http://arxiv.org/abs/1305.2512

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Attracting shallow donors: Hydrogen passivation in (Al,Ga,In)-doped ZnO

Autor: Matsubara, Masahiko, Amini, Mozhgan N., Saniz, Rolando, Lamoen, Dirk, Partoens, Bart

The hydrogen interstitial and the substitutional Al_Zn, Ga_Zn and In_Zn are all shallow donors in ZnO and lead to n-type conductivity. Although shallow donors are expected to repel each other, we show by first principles calculations that in ZnO thes

Externí odkaz: http://arxiv.org/abs/1204.0364

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