Zobrazeno 1 - 10
of 220
pro vyhledávání: '"Mats-Erik Pistol"'
Considering Symmetry Properties of InP Nanowire/Light Incidence Systems to Gain Broadband Absorption
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 3, Pp 1-10 (2017)
Geometrically designed III-V nanowire arrays are promising candidates for disruptive optoelectronics due to the possibility of obtaining a strongly enhanced absorption resulting from nanophotonic resonance effects. With normally incident light on suc
Externí odkaz:
https://doaj.org/article/8bc58390d7754ba797292e89a7585343
Publikováno v:
Journal of physics. Condensed matter : an Institute of Physics journal. 34(12)
Calculating the electronic structure of systems involving very different length scales presents a challenge. Empirical atomistic descriptions such as pseudopotentials or tight-binding models allow one to calculate the effects of atomic placements, bu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b41ac7305f581f8f4a0566bb218160cb
https://pubmed.ncbi.nlm.nih.gov/34920442
https://pubmed.ncbi.nlm.nih.gov/34920442
Publikováno v:
Computational Materials Science. 211:111479
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::656b35f891b3501dfa1bb5d4f27a5252
https://doi.org/10.1016/j.commatsci.2022.111479
https://doi.org/10.1016/j.commatsci.2022.111479
Autor:
Asmita Jash, Aymen Yangui, Sebastian Lehmann, Ivan G. Scheblykin, Kimberly A. Dick, Anders Gustafsson, Mats-Erik Pistol
Publikováno v:
Applied Physics Letters. 120:113102
The interface between wurtzite and zinc blende InP has been identified as type-II, where electrons gather on the zinc blende side and holes on the wurtzite side of the interface. The photoluminescence resulting from recombination across the interface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42d89b1b67d639f64f260e5746ae950e
https://doi.org/10.1063/5.0083159
https://doi.org/10.1063/5.0083159
Publikováno v:
Optics express. 28(8)
It is now possible to synthesize the wurtzite crystal phase of most III-V semiconductors in the form of nanowires. This sparks interest for fundamental research and adds extra degrees of freedom for designing novel devices. However, the understanding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::ea1f01c27e3ee0a850eedd669962da61
https://pubmed.ncbi.nlm.nih.gov/32403621
https://pubmed.ncbi.nlm.nih.gov/32403621
Autor:
Olof Hultin, Anders Gustafsson, Rainer Timm, Maryam Khalilian, Mats-Erik Pistol, Jonas Ohlsson, Reine Wallenberg, Jonas Johansson, Jovana Colvin, Filip Lenrick, Lars Samuelson, Zhaoxia Bi
Publikováno v:
Small (Weinheim an der Bergstrasse, Germany). 16(30)
III-nitrides are considered the material of choice for light-emitting diodes (LEDs) and lasers in the visible to ultraviolet spectral range. The development is hampered by lattice and thermal mismatch between the nitride layers and the growth substra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::108551a5b8b10f18a73e4872df31c464
https://pubmed.ncbi.nlm.nih.gov/32578387
https://pubmed.ncbi.nlm.nih.gov/32578387
Autor:
Simon Kubitza, Mats-Erik Pistol, Sebastian Lehmann, Neimantas Vainorius, Lars Samuelson, Kimberly A. Dick
Publikováno v:
Nanoscale. 10:1481-1486
It has recently become possible to grow GaAs in the wurtzite crystal phase. This ability allows interesting tests of band-structure theory. Wurtzite GaAs has two closely spaced direct conduction bands as well as three nondegenerate valence bands. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a8251d2e6a576fa069b18a25234b934
https://doi.org/10.1039/c7nr07635e
https://doi.org/10.1039/c7nr07635e
Autor:
Irene Geijselaers, Neimantas Vainorius, Sebastian Lehmann, Craig E. Pryor, Kimberly A. Dick, Mats-Erik Pistol
Publikováno v:
Applied Physics Letters. 119:263102
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9f0f062bbf01ebabec89cf7976de751
https://doi.org/10.1063/5.0072151
https://doi.org/10.1063/5.0072151
Autor:
Lars Samuelson, Neimantas Vainorius, Kilian Mergenthaler, Mats-Erik Pistol, Nicklas Anttu, Sebastian Lehmann, Mahtab Aghaeipour, Magnus T. Borgström
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-6 (2017)
Nature Communications
Nature Communications
It has recently been found that anti-Stokes photoluminescence can be observed in degenerately n-doped indium phosphide nanowires, when exciting directly into the electron gas. This anti-Stokes mechanism has not been observed before and allows the stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85d3aa03963571c6e3d46e5cac9444b4
https://doaj.org/article/176b775b11d34ba8b6d055ef7338fa9c
https://doaj.org/article/176b775b11d34ba8b6d055ef7338fa9c
Publikováno v:
2019 Compound Semiconductor Week (CSW).
One advantage of nanowires is the possibility to create heterostructures of the same material, but different crystal structures. These polytype-interfaces are atomically sharp and, in many cases, have a type-II band-alignment. We show, using optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e682c938feb87aef0b48b80f4cb3f915
https://doi.org/10.1109/iciprm.2019.8819357
https://doi.org/10.1109/iciprm.2019.8819357