Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Mats Hjelm"'
Publikováno v:
IEEE Transactions on Antennas and Propagation. 55:2709-2717
We address the question of robustness of damaged microstrip antennas, the damage being either penetrating, caused by fragment impact, or floating, caused by manufacturing imperfections. A simple analytic expression is derived to facilitate the predic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6be04a08ed0524ff4e4c27f596207e41
https://doi.org/10.1109/tap.2007.905950
https://doi.org/10.1109/tap.2007.905950
Publikováno v:
Journal of Computational Electronics. 6:163-166
We have studied the time evolution of an ensemble of holes in Wurtzite GaN under the effect of a high electric field. The density matrix equation used as a foundation in the study includes band-to-band tunneling, but disregards collisions. In the des
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::79ea8cf720e89088232c92e46ea6b9b4
https://doi.org/10.1007/s10825-006-0081-y
https://doi.org/10.1007/s10825-006-0081-y
Publikováno v:
Semiconductor Science and Technology. 19:1061-1066
A set of equations for calculating the probability for electric-field-induced interband transitions in periodic crystals (Krieger and Iafrate 1986 Phys. Rev. B 33 5494) can be used in combination with the full band Monte Carlo method to study high-fi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5226278efb10677ebcc57117a6fb6a1a
https://doi.org/10.1088/0268-1242/19/8/018
https://doi.org/10.1088/0268-1242/19/8/018
Publikováno v:
Materials Science Forum. :1237-1240
The scattering probabilities for a multiband carrier wave function have been studied for hole transport in 4H-SiC. During the drift at high electric fields it is possible to find the carriers with ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fd4b963eac9fe88eca278a0dde76a0b
https://doi.org/10.4028/www.scientific.net/msf.457-460.1237
https://doi.org/10.4028/www.scientific.net/msf.457-460.1237
Autor:
Hans-Erik Nilsson, Mats Hjelm
Publikováno v:
Physica Scripta. :61-65
The GEMS (General Monte Carlo Semiconductor) simulator is a full band ensemble program developed at Mid-Sweden University. A principal objective of the project is to create a flexible tool that can be used for the exploration of properties of new sem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3d2357322b0881a32cb22856cc3d0b7
https://doi.org/10.1088/0031-8949/2004/t114/014
https://doi.org/10.1088/0031-8949/2004/t114/014
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 509:76-85
The spatial resolution of scintillator-coated X-ray pixel detectors is usually limited by the isotropic light spread in the scintillator. One way to overcome this limitation is to use a pixellated scintillating layer on top of the semiconductor pixel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2faa442ff5eee6843d911794ffb1086f
https://doi.org/10.1016/s0168-9002(03)01553-5
https://doi.org/10.1016/s0168-9002(03)01553-5
Publikováno v:
Journal of Applied Physics. 93:3389-3394
A full band Monte Carlo study of the electron transport in 3C–SiC is presented based on an ab initio band structure calculation using the local density approximation to the density functional theory. The scattering rates and impact ionization trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f63d472252d5da8301770618d30325a9
https://doi.org/10.1063/1.1554472
https://doi.org/10.1063/1.1554472
Publikováno v:
Mathematics and Computers in Simulation. 62:471-478
A Monte Carlo study of the transient response of single photon absorption in X-ray pixel detectors is presented. The simulation results have been combined with Monte Carlo simulation of the X-ray photon transport and absorption, and used to estimate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0ccd0ceab4d43430ff1d25dddf024a6
https://doi.org/10.1016/s0378-4754(02)00242-2
https://doi.org/10.1016/s0378-4754(02)00242-2
Publikováno v:
Journal of Applied Physics. 93:1099-1107
A full-band ensemble Monte Carlo simulation has been used to study the high-field carrier transport properties of 4H-SiC. The complicated band structure of 4H-SiC requires the consideration of band-to-band tunneling at high electric fields. We have u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e43c6323ebfedb2aeb2cbfc989d665bf
https://doi.org/10.1063/1.1530712
https://doi.org/10.1063/1.1530712
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 487:151-162
A fully stochastic model for the imaging properties of X-ray silicon pixel detectors is presented. Both integrating and photon counting configurations have been considered, as well as scintillator-coated structures. The model is based on three levels
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d55a5bda879e8c2d9af81d296fd1d70
https://doi.org/10.1016/s0168-9002(02)00959-2
https://doi.org/10.1016/s0168-9002(02)00959-2