Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Matija Pirc"'
Publikováno v:
IEEE Access, Vol 12, Pp 169442-169451 (2024)
In this study, we present a development of a solar-powered Internet-of-Things (IoT) device, that incorporates both light energy harvesting and solar cell monitoring, which we demonstrate by long term monitoring of a single perovskite solar cell in of
Externí odkaz:
https://doaj.org/article/91bbcf5565d3461b8146d53fb2332767
Autor:
Matija Pirc
Publikováno v:
Informacije MIDEM - Journal of Microelectronics, Electronic Components and Materials. :33-42
Parametric acoustic arrays (PAA) have progressed from specialized niche applications to commercially available audio solutions in the last two decades. Their primary advantage is their incredible directivity and their main disadvantage is low convers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e626cc63aab84311336cb422833233f
https://doi.org/10.33180/infmidem2019.105
https://doi.org/10.33180/infmidem2019.105
Publikováno v:
IET renewable power generation, str. 2802-2806 : Ilustr., Vol. 13, iss. 15, 2019
COBISS-ID: 5881172
IET renewable power generation, pp. 1-5, 2019.
COBISS-ID: 5881172
IET renewable power generation, pp. 1-5, 2019.
Understanding the degradation of a photovoltaic (PV) system is crucial for predicting the behaviour of a PV system or acting quickly in case of strong PV module degradation. A novel concept with Wi-Fi devices for monitoring the substring voltages of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5cb4f1f15c6ac5449cc3d513fd30108
https://plus.cobiss.net/cobiss/si/en/bib/12724820
https://plus.cobiss.net/cobiss/si/en/bib/12724820
Publikováno v:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC).
As the number of photovoltaic installations increases, so does the interest in PV module degradation and failure mechanisms. We developed a novel electronic device for PV module substring voltage measurements that can be installed directly into the j
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ed311b6a917ee40a227bcfda0943df0
https://doi.org/10.1109/pvsc40753.2019.8980723
https://doi.org/10.1109/pvsc40753.2019.8980723
Publikováno v:
Electronics, vol. 8, no. 3, 343, 2019.
Electronics, Vol 8, Iss 3, p 343 (2019)
Electronics
Volume 8
Issue 3
Electronics, Vol 8, Iss 3, p 343 (2019)
Electronics
Volume 8
Issue 3
Much biomedical research focuses on the effects of UV light on human cells. UV light sources are a prerequisite for such research. This paper presents the design and achieved performance of a UVA (Ultraviolet A: 320&ndash
400 nm) and a UVB (Ultr
400 nm) and a UVB (Ultr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0d140828576165be8c28c91716bcce48
https://repozitorij.uni-lj.si/IzpisGradiva.php?id=107466
https://repozitorij.uni-lj.si/IzpisGradiva.php?id=107466
Publikováno v:
physica status solidi c. 11:200-205
Optical properties of amorphous semiconductors are influenced by applied or built-in electric fields. Measurements of the optical absorption change of device grade intrinsic hydrogenated amorphous silicon were performed indirectly by measuring the op
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e221e448c41e868d8469798138b258d
https://doi.org/10.1002/pssc.201300176
https://doi.org/10.1002/pssc.201300176
Autor:
Jože Furlan, Matija Pirc
Publikováno v:
IEEE Transactions on Electron Devices. 58:4318-4323
A theoretical model for the optical absorption of amorphous silicon (a-Si) at high electric field aimed for ease of use is developed. Optical absorption is proportional to the number of possible transitions from valence band to conduction band. When
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8138b0ef201f6bebe557f5f024fa9070
https://doi.org/10.1109/ted.2011.2169068
https://doi.org/10.1109/ted.2011.2169068
Publikováno v:
physica status solidi c. 7:646-649
In this paper optical properties of intrinsic hydrogenated amorphous silicon (i -a-Si:H) at high electric field are studied. A theoretical model for an absorption coefficient that predicts its increase at higher electric field has been developed base
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73ec1fb2a528df2178a225e581e8e820
https://doi.org/10.1002/pssc.200982788
https://doi.org/10.1002/pssc.200982788