Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Mathilde Billaud"'
Autor:
Tanja Braun, Ole Holck, Mattis Obst, Steve Voges, Ruben Kahle, Lars Bottcher, Mathilde Billaud, Lutz Stobbe, Karl-Friedrich Becker, Rolf Aschenbrenner, Marcus Voitel, Friedrich-Leonhard Schein, Lutz Gerholt, Martin Schneider-Ramelow
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::887a6880363d374ec8b9f1a684099501
https://doi.org/10.1109/ectc51906.2022.00133
https://doi.org/10.1109/ectc51906.2022.00133
Publikováno v:
2019 22nd European Microelectronics and Packaging Conference & Exhibition (EMPC).
In response to the emerging trends in packaging technologies, detailed cost analysis models are required to assess the economical and environmental feasibility of different technology options, business scenarios, design options, and process configura
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e857207ebfc22fe2e3dca49eb5040662
https://doi.org/10.23919/empc44848.2019.8951756
https://doi.org/10.23919/empc44848.2019.8951756
Autor:
Martin Schneider-Ramelow, Rolf Aschenbrenner, Tanja Braun, Karl-Friedrich Becker, Mathilde Billaud, Lutz Stobbe, Ole Hoelck, Markus Wohrmann, Michael Topper, S. Voges, Lars Boettcher, Klaus-Dieter Lang, Hannes Zedel
Publikováno v:
2018 International Wafer Level Packaging Conference (IWLPC).
Panel Level packaging (PLP) is one of the latest packaging trends in microelectronics. Besides technology developments towards heterogeneous integration also larger substrates formats are targeted. Fan-out Wafer Level manufacturing is currently done
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8e389a68d48703e1fe5f357451906c8
https://doi.org/10.23919/iwlpc.2018.8573277
https://doi.org/10.23919/iwlpc.2018.8573277
Autor:
Alexandre Arnoult, H. Grampeix, Maud Vinet, Mickael Martin, Mathilde Billaud, Philippe Ferrandis, Julien Duvernay, Thierry Baron, Mikael Casse, Gilles Reimbold, Hervé Boutry
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161534. ⟨10.1063/1.5007920⟩
Journal of Applied Physics, 2018, 123 (16), pp.161534. ⟨10.1063/1.5007920⟩
Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161534
Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161534. 〈10.1063/1.5007920〉
Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161534. ⟨10.1063/1.5007920⟩
Journal of Applied Physics, 2018, 123 (16), pp.161534. ⟨10.1063/1.5007920⟩
Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161534
Journal of Applied Physics, American Institute of Physics, 2018, 123 (16), pp.161534. 〈10.1063/1.5007920〉
International audience; To overcome the Fermi-level pinning in III-V metal-oxide-semiconductor capacitors, attention is usually focused on the choice of dielectric and surface chemical treatments prior to oxide deposi-tion. In this work, we examined
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c76468ce6d4c6db61c2ac7b744fe05e
https://hal.archives-ouvertes.fr/hal-01987681/document
https://hal.archives-ouvertes.fr/hal-01987681/document
Autor:
Hervé Boutry, Thierry Baron, Oliver Faynot, Thomas Ernst, Christophe Vallée, Mathilde Billaud, Gilles Reimbold, Julien Duvernay, Bernard Pelissier, Mickaël Cassé, Mickael Martin, Zdenek Chalupa, Maud Vinet, Helen Grampeix, Sylvain David
Publikováno v:
ECS Transactions
ECS Transactions, 2015, 69 (5), pp.9-13. ⟨10.1149/06905.0009ecst⟩
ECS Transactions, Electrochemical Society, Inc., 2015, 69 (5), pp.9-13. ⟨10.1149/06905.0009ecst⟩
ECS Transactions, 2015, 69 (5), pp.9-13. ⟨10.1149/06905.0009ecst⟩
ECS Transactions, Electrochemical Society, Inc., 2015, 69 (5), pp.9-13. ⟨10.1149/06905.0009ecst⟩
The achievement of a good high-k oxide/InGaAs interface quality is a key challenge to obtain high performance MOSFET. Associating Al2O3 and HfO2 in a bilayer oxide is interesting to benefit from the good interface quality obtained with Al2O3 and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47708159cb4c5a5a47223d9349b10baa
https://doi.org/10.1149/06905.0009ecst
https://doi.org/10.1149/06905.0009ecst