Zobrazeno 1 - 10
of 116
pro vyhledávání: '"Mathieu Stoffel"'
Autor:
Alix Valdenaire, Alaa Eldin Giba, Mathieu Stoffel, Xavier Devaux, Loïc Foussat, Jean-Marie Poumirol, Caroline Bonafos, Sonia Guehairia, Rémi Demoulin, Etienne Talbot, Michel Vergnat, Hervé Rinnert
Publikováno v:
ACS Applied Nano Materials
ACS Applied Nano Materials, 2023, ⟨10.1021/acsanm.2c05088⟩
ACS Applied Nano Materials, 2023, ⟨10.1021/acsanm.2c05088⟩
International audience; As building blocks of multifunctional materials involving coupling at the nanoscale, highly doped semiconductor nanocrystals are of great interest for potential applications in nanophotonics. In this work, we investigate the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d352ee96718f818e2d7ab6718d6f882
https://hal.science/hal-04003494/document
https://hal.science/hal-04003494/document
Autor:
A. Valdenaire, Xavier Devaux, S. Geiskopf, Michel Vergnat, Cédric Carteret, Alexandre Bouché, Mathieu Stoffel, Hervé Rinnert, Erwan André
Publikováno v:
Journal of Physical Chemistry C
Journal of Physical Chemistry C, American Chemical Society, 2021, ⟨10.1021/acs.jpcc.0c11165⟩
Journal of Physical Chemistry C, American Chemical Society, 2021, ⟨10.1021/acs.jpcc.0c11165⟩
International audience; We investigate the structural and vibrational properties of Si:P thin films obtained by coevaporation of Si and P in ultra-high vacuum at room temperature followed by rapid thermal annealing. The thermal crystallization of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9f8c4060fbbf58b1c618d2e593e1eab
https://doi.org/10.1021/acs.jpcc.0c11165
https://doi.org/10.1021/acs.jpcc.0c11165
Autor:
Fatme, Trad, Alaa E, Giba, Xavier, Devaux, Mathieu, Stoffel, Denis, Zhigunov, Alexandre, Bouché, Sébastien, Geiskopf, Rémi, Demoulin, Philippe, Pareige, Etienne, Talbot, Michel, Vergnat, Hervé, Rinnert
Publikováno v:
Nanoscale. 13(46)
This work reports on the influence of phosphorous atoms on the phase separation process and optical properties of silicon nanocrystals (Si-NCs) embedded in phosphorus doped SiO/SiO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::d8a3ea74c77ecd2ad665237a92d9a87a
https://pubmed.ncbi.nlm.nih.gov/34816268
https://pubmed.ncbi.nlm.nih.gov/34816268
Autor:
Michel Vergnat, Rémi Demoulin, Denis M. Zhigunov, Hervé Rinnert, Xavier Devaux, Philippe Pareige, Fatme Trad, Mathieu Stoffel, Etienne Talbot, Alexandre Bouché, Alaa E. Giba, Sebastien Geiskopf
Publikováno v:
Nanoscale
Nanoscale, 2021, ⟨10.1039/D1NR04765E⟩
Nanoscale, Royal Society of Chemistry, 2021, ⟨10.1039/D1NR04765E⟩
Nanoscale, 2021, ⟨10.1039/D1NR04765E⟩
Nanoscale, Royal Society of Chemistry, 2021, ⟨10.1039/D1NR04765E⟩
International audience; This work reports on the influence of phosphorous atoms on the phase separation process and optical properties of silicon nanocrystals (Si-NCs) embedded in phosphorus doped SiO/SiO 2 multilayers. Doped SiO/SiO 2 multilayers wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43b4097c50f21f0e3d1a5d230327d292
https://hal.science/hal-03457250/document
https://hal.science/hal-03457250/document
Autor:
Michel Vergnat, Pierre Renucci, Ziqi Zhou, Alexandre Bouché, Abdallah Jaafar, Paul Marcon, Hans Tornatzky, Hervé Rinnert, Cedric Robert, Sylvie Migot, Xavier Marie, Xavier Devaux, Mathieu Stoffel, J.-M. George, Philippe Pigeat, Rémi Arras, Yuan Lu, Zhongming Wei, L. Calmels, Lei Ren, Henri-Yves Jaffrès
Publikováno v:
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2021, 13 (27), pp.32579-32589. ⟨10.1021/acsami.1c08805⟩
ACS Applied Materials & Interfaces, 2021, 13 (27), pp.32579-32589. ⟨10.1021/acsami.1c08805⟩
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2021, 13 (27), pp.32579-32589. ⟨10.1021/acsami.1c08805⟩
ACS Applied Materials & Interfaces, 2021, 13 (27), pp.32579-32589. ⟨10.1021/acsami.1c08805⟩
International audience; Perpendicularly magnetized spin injector with high Curie temperature is a prerequisite for developing spin optoelectronic devices on 2D materials working at room temperature (RT) with zero applied magnetic field. Here, we repo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e90689039e735b92f090d8e30ebce03d
https://hal.archives-ouvertes.fr/hal-03379768/document
https://hal.archives-ouvertes.fr/hal-03379768/document
Autor:
Ziqi, Zhou, Paul, Marcon, Xavier, Devaux, Philippe, Pigeat, Alexandre, Bouché, Sylvie, Migot, Abdallah, Jaafar, Rémi, Arras, Michel, Vergnat, Lei, Ren, Hans, Tornatzky, Cedric, Robert, Xavier, Marie, Jean-Marie, George, Henri-Yves, Jaffrès, Mathieu, Stoffel, Hervé, Rinnert, Zhongming, Wei, Pierre, Renucci, Lionel, Calmels, Yuan, Lu
Publikováno v:
ACS applied materialsinterfaces. 13(27)
A perpendicularly magnetized spin injector with a high Curie temperature is a prerequisite for developing spin optoelectronic devices on two-dimensional (2D) materials working at room temperature (RT) with zero applied magnetic field. Here, we report
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::84d79731c1883df4a327f7cc8c5b405d
https://pubmed.ncbi.nlm.nih.gov/34196522
https://pubmed.ncbi.nlm.nih.gov/34196522
Autor:
Yuan Lu, Guangwei Cong, Mathieu Stoffel, Bo Xu, Zhanguo Wang, Hervé Rinnert, Henri Jaffrès, Xue Gao, Xavier Devaux, Pierre Renucci, Xavier Marie, Alaa E. Giba, J.-M. George
Publikováno v:
Physical Review Applied. 14
We report on efficient spin injection in p-doped $(\mathrm{In},\mathrm{Ga})\mathrm{As}/\mathrm{Ga}\mathrm{As}$ quantum-dot (QD) spin light-emitting diodes (spin LEDs) under zero applied magnetic field. A high degree of electroluminescence circular po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b6314795d45e7384c04874287650ae4
https://doi.org/10.1103/physrevapplied.14.034017
https://doi.org/10.1103/physrevapplied.14.034017
Autor:
Hongxin Yang, Abir Nachawaty, Xavier Devaux, Mairbek Chshiev, Rachel Desfeux, Jianping Liu, Yuan Lu, Guichao Hu, Mathieu Stoffel, Anthony Ferri, Didier Rouxel, Xiaoguang Li, Chunping Jiang, Antonio Da Costa, Shiheng Liang, Zhongming Zeng, Weichuan Huang, Hui Yang, Xue Gao
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2020, 116 (15), pp.152905. ⟨10.1063/1.5145316⟩
Applied Physics Letters, 2020, 116 (15), pp.152905. ⟨10.1063/1.5145316⟩
Applied Physics Letters, American Institute of Physics, 2020, 116 (15), pp.152905. ⟨10.1063/1.5145316⟩
Applied Physics Letters, 2020, 116 (15), pp.152905. ⟨10.1063/1.5145316⟩
International audience; We report on the fabrication of an organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of the Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b57d04117ffc5b65edffca8a49f2db20
https://hal.archives-ouvertes.fr/hal-02573086
https://hal.archives-ouvertes.fr/hal-02573086
Autor:
S. G. Cherkova, M. P. Gambaryan, Mathieu Stoffel, Vladimir A. Volodin, Michel Vergnat, Hervé Rinnert, G. K. Krivyakin
Publikováno v:
Physics of the Solid State
Physics of the Solid State, Springer, 2020, 62 (3), pp.492-498. ⟨10.1134/S1063783420030105⟩
Physics of the Solid State, Springer, 2020, 62 (3), pp.492-498. ⟨10.1134/S1063783420030105⟩
Films of nonstoichiometric germanium–silicon glasses of two types—GeOx[SiO](1 – x) and GeOx[SiO2](1 – x)—are deposited onto cold Si (001) substrates by evaporating GeO2 and SiO (or SiO2) powders simultaneously in high vacuum. Film samples i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a1d4ed682a01c38327061e12acfb3fc
https://hal.archives-ouvertes.fr/hal-02960811
https://hal.archives-ouvertes.fr/hal-02960811
Autor:
Vladimir A. Volodin, S. A. Kochubey, Michel Vergnat, Hervé Rinnert, Zhang Fan, Mathieu Stoffel
Publikováno v:
Fizika i tekhnika poluprovodnicov / Semiconductors
Fizika i tekhnika poluprovodnicov / Semiconductors, MAIK Nauka/Interperiodica, 2020, 54 (3), pp.322-329. ⟨10.1134/S1063782620030070⟩
Fizika i tekhnika poluprovodnicov / Semiconductors, MAIK Nauka/Interperiodica, 2020, 54 (3), pp.322-329. ⟨10.1134/S1063782620030070⟩
Nonstoichiometric GeO0.5[SiO2]0.5 and GeO0.5[SiO]0.5 germanosilicate glassy films are produced by the high-vacuum coevaporation of GeO2 and either SiO or SiO2 powders with deposition onto a cold fused silica substrate. Then the films are subjected to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::30afb94f0bee8b4fdfdef5af2b827a5f
https://hal.archives-ouvertes.fr/hal-02960808
https://hal.archives-ouvertes.fr/hal-02960808