Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection

Autor: Alexandra Abbadie, T. Billon, G. Rolland, P. Holliger, S. Laval, A.M. Papon, J.M. Hartmann, Mathieu Rouviere, Jean-Marc Fedeli, Laurent Vivien

Publikováno v: Journal of Applied Physics. 95:5905-5913

Ge-based photodetectors operating in the low loss windows (1.3–1.6 μm) of silica fibers are highly desirable for the development of optical interconnections on silicon-on-insulator substrates. We have therefore investigated the structural and opti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bef5a1088eb7de8fea003f50cc788f19
https://doi.org/10.1063/1.1699524

Germanium photodetector integrated in a Silicon-On-Insulator microwaveguide

Autor: Mathieu Rouviere, S. Laval, J-M. Fedeli, Paul Crozat, Laurent Vivien, Eric Cassan, X. Le Roux, Jean-Francois Damlencourt, J. Mangeney, L. El Melhaoui, Delphine Marris-Morini

Publikováno v: Scopus-Elsevier

Design, fabrication and characterization of germanium on silicon photodetector integrated in SOI waveguide are reported. A responsivity of 1 A/W and a -3 dB bandwidth of 25 GHz under 6 V bias have been obtained at lambda=1.55 mum.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ffd75b96d013f23d7a966d447cb16599
https://doi.org/10.1109/group4.2007.4347743

Germanium on silicon photodetectors for telecom wavelengths

Autor: Suzanne Laval, Jean-Marc Fedeli, Jean-Francois Damlencourt, Xavier Le Roux, Paul Crozat, Loubna El Melhaoui, Juliette Mangeney, Laurent Vivien, Daniel Pascal, Delphine Marris-Morini, Mathieu Rouviere, Eric Cassan

Publikováno v: SPIE Proceedings.

This paper reports on fabrication and characterization of two kinds of photodetectors: interdigited metal-germanium on silicon-metal photodetectors (Metal-Semiconductor-Metal or MSM) and pin germanium photodiodes for operation at optical telecommunic

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aaad21125412b6c6ac42649ec23b45f0
https://doi.org/10.1117/12.700621

Optical distributions using low-loss submicron rib SOI structures

Autor: J-M. Fedeli, Daniel Pascal, L. El Melhaoui, Delphine Marris, Laurent Vivien, S. Lardenois, Eric Cassan, Mathieu Rouviere, S. Laval

Publikováno v: CLEO/Europe. 2005 Conference on Lasers and Electro-Optics Europe, 2005..

Silicon-on-insulator (SOI) substrates have generated an increasing interest in the recent years, for both microelectronic and microphotonic applications. SOI substrates allow a strong integration density of optical devices. In this paper, experimenta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c2d4d7374c2687c5f230398cc2b4b0a4
https://doi.org/10.1109/cleoe.2005.1568285

UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si

Autor: J.-L. Cercus, Eric Cassan, Yunlin Jacques Zheng, M. Halbwax, Vy Yam, Mathieu Rouviere, Dominique Débarre, S. Laval, Daniel Bouchier, C. Clerc, Lam H. Nguyen

Publikováno v: Optical Materials
Optical Materials, 2005, 27, pp.822-826. ⟨10.1016/j.optmat.2004.08.005⟩
Optical Materials, Elsevier, 2005, 27, pp.822-826. ⟨10.1016/j.optmat.2004.08.005⟩

The structural effects of single and cyclic thermal annealings on relaxed Ge epilayers on Si(0 0 1) are investigated. The structural morphology of the films is studied ex situ by Rutherford back scattering spectrometry in channelling geometry (RBS-C)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::458124d2bb36698760cbe3ef29489381
https://hal.science/hal-00020246