Surface-Localized 15R Formation on 4H-SiC (0001) Si-Face by Laser Annealing for Power N-Type MOSFETs

Autor: Fabien Rozé, Toshiyuki Tabata, Sébastien Kerdilès, Leonard M. Rubin, Pierre-Edouard Raynal, Pablo Acosta-Alba, Dwight Roh, Mathieu Opprecht, Fulvio Mazzamuto

Publikováno v: Solid State Phenomena. 342:79-83

A SiC MOSFET fabricated on a thin 15R-SiC layer on top of a 4H-SiC would benefit from both the higher inversion channel mobility of 15R-SiC and higher bulk mobility of 4H-SiC. In this work, a method based on Al implantation followed by UV laser annea

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4dfe05799312d856bb45f98a06e5347f
https://doi.org/10.4028/p-94455v

A solution to the hot cracking problem for aluminium alloys manufactured by laser beam melting

Autor: Mathieu Soulier, Mathieu Opprecht, Camille Flament, Jean-Paul Garandet, Guilhem Roux

Publikováno v: Acta Materialia
Acta Materialia, 2020, 197, pp.40-53. ⟨10.1016/j.actamat.2020.07.015⟩
Acta Materialia, Elsevier, 2020, 197, pp.40-53. ⟨10.1016/j.actamat.2020.07.015⟩

A method to eliminate hot cracking phenomena for aluminium alloys in Laser Beam Melting (LBM) is presented in this paper, focused here on the 6061 alloy. 6061 is a precipitation-hardened aluminium alloy, containing magnesium and silicon as its major

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::99ced953f83dac89df6239dce32b7782
https://hal.science/hal-03491976