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pro vyhledávání: '"Mathias Szmidt"'
Autor:
Olof Engström, Bahman Raeissi, Johan Piscator, Ivona Z. Mitrovic, Stephen Hall, Heinrich D. B. Gottlob, Mathias Szmidt, Paul K. Hurley, Karim Cherkaoui
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 4 (2023)
The transition regions of GdSiO/SiOx and HfO2/SiOx interfaces have been studied with the high-k layers deposited on silicon substrates. The existence of transition regions was verified by medium energy ion scattering (MEIS) data and transmission elec
Externí odkaz:
https://doaj.org/article/656a0d1b9bb3460e8a1f78b91b3016a7
