Zobrazeno 1 - 10
of 97
pro vyhledávání: '"Materialien - Solarzellen und Technologie"'
Publikováno v:
Progress in Photovoltaics: Research and Applications
One approach to consider the prevailing spectral conditions when performing CPV module power ratings according to the standard IEC 62670‐3 is based on spectral matching ratios (SMRs) determined by the means of component cell sensors. In this work,
Autor:
T.N.D. Tibbits, David Lackner, Frank Dimroth, Stefan Heckelmann, Alexandre W. Walker, Andreas W. Bett
Publikováno v:
Solar Energy Materials and Solar Cells. 168:234-240
The radiation hardness of AlGaAs single-junction solar cells is investigated for various n-i-p solar cell designs. The material composition in both the n-p regions is varied between 3.5% and 16% Al-content, whereas the intrinsic region has a higher A
Publikováno v:
Optik. 131:287-291
This work addresses the alignment of a light spot onto photovoltaic laser power converters for power-by-light applications. A model to compare the alignment tolerances of different cell designs by means of the maximum acceptable misalignment is intro
Autor:
Nena Milenkovic, Stefan Janz, Stefan Reber, M. Drießen, Diana Amiri, Jan Benick, Bernd Steinhauser, Stefan Lindekugel
Publikováno v:
Energy Procedia. 92:785-790
We present n-type epitaxially grown wafers deposited in a reactor that allows a process transfer to inline high-throughput reactors. Those wafers exhibit an effective lifetime of up to 1720 μs locally for a phosphorous concentration of 2·1015 cm-3
Autor:
Lars Arnberg, Guilherme Gaspar, Sindy Würzner, Eivind Øvrelid, Gianluca Coletti, Marisa Di Sabatino, Mari Juel, Rune Søndenå
Publikováno v:
Solar Energy Materials and Solar Cells. 153:31-43
Four industrial-scale n-type Czochralski silicon crystals were grown with different impurity contents, i.e. metallics, phosphorus and oxygen. Horizontal slices were obtained from the top and middle of the crystals and were characterized in terms of l
Publikováno v:
Solar Energy. 127:96-108
A major issue in the characterization of photovoltaic modules is the limitation of the homogenously irradiated area provided by the available sun simulators. Therefore the Stepwise Measurement Procedure for the Characterization of Large-area PV Modul
Autor:
Markus Feifel, Jens Ohlmann, David Lackner, Jan Benick, Frank Dimroth, Stefan Janz, Martin Hermle, Thomas Rachow
Publikováno v:
IEEE Journal of Photovoltaics. 6:384-390
The integration of III-V compound semiconductors on a silicon bottom cell offers the opportunity to form two- and three-junction solar cells with a conversion efficiency exceeding 30%. This paper reports on the progress in the heteroepitaxial nucleat
Publikováno v:
IEEE Journal of Photovoltaics. 6:266-271
Quantum efficiency (QE) is an important measurand that contains extensive information about the electrical and optical properties of photovoltaic devices. During device characterization, the measurement is, therefore, mandatory and necessary for, e.g
Publikováno v:
Journal of Crystal Growth. 432:139-145
Porous silicon and epitaxial thickening is a lift-off approach for silicon foil fabrication to avoid kerf losses and produce foils with thicknesses less than 50 µm. The crystal quality of the epitaxial silicon film strongly depends on the porous sil
Publikováno v:
Fakidis, J, Videv, S, Helmers, H & Haas, H 2018, ' 0.5-Gb/s OFDM-Based Laser Data and Power Transfer Using a GaAs Photovoltaic Cell ', IEEE Photonics Technology Letters . https://doi.org/10.1109/LPT.2018.2815273
Fakidis, J, Videv, S, Helmers, H & Haas, H 2018, 0.5-Gb/s OFDM-Based Laser Data and Power Transfer Using a GaAs Photovoltaic Cell . in 31st Annual Conference of the IEEE Photonics Society . 31st Annual Conference of the IEEE Photonics Society, IPC 2018, Reston, United States, 30/09/18 .
Fakidis, J, Videv, S, Helmers, H & Haas, H 2018, 0.5-Gb/s OFDM-Based Laser Data and Power Transfer Using a GaAs Photovoltaic Cell . in 31st Annual Conference of the IEEE Photonics Society . 31st Annual Conference of the IEEE Photonics Society, IPC 2018, Reston, United States, 30/09/18 .
In this letter, we demonstrate for the first time the additional capability of high-speed data communication for single-junction photovoltaic (PV) cells. A record 3-dB bandwidth of 24.5 MHz is reported for a gallium arsenide (GaAs) PV cell. The PV ce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af8d75efc616db03e007adc025f5b4d3
https://hdl.handle.net/20.500.11820/63f6970a-0234-4919-8074-824a693d22e9
https://hdl.handle.net/20.500.11820/63f6970a-0234-4919-8074-824a693d22e9