Zobrazeno 1 - 10 of 30 pro vyhledávání: '"Mateos López, Javier"'
1
Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis
Autor: García Vasallo, Beatriz, González Sánchez, Tomás, Talbo, Vincent, Lechaux, Yoann, Wichmann, Nicolas, Bollaert, Sylvain, Mateos López, Javier
Publikováno v: GREDOS. Repositorio Institucional de la Universidad de Salamanca
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[EN]III-V Impact-ionization (II) metal-oxide-semiconductor FETs (I-MOSFETs) and tunnel FETs (TFETs) are being explored as promising devices for low-power digital applications. To assist the development of these devices from the physical point of view
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::5064604659b0cbe064f52287d3beb12f
http://hdl.handle.net/10366/138063
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2
Monte Carlo calculation of In0.53Ga0.47As and InAs noise parameters
Autor: Karishy, Slyman, Palermo, Christophe, Sabatini, Giulio, Marinchio, Hugues, Varani, Luca, Mateos López, Javier, González Sánchez, Tomás
Publikováno v: 2017 International Conference on Noise and Fluctuations (ICNF)
2017 International Conference on Noise and Fluctuations (ICNF), Jun 2017, Vilnius, Lithuania. pp.1-4, ⟨10.1109/ICNF.2017.7985941⟩
GREDOS. Repositorio Institucional de la Universidad de Salamanca
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[EN]The increase of modern electronics performances depends on the ability to grow high-frequency, low-noise and low-power devices. Nowadays, InP technology is mature and In0.53Ga0.47As is clearly a material of interest. Moreover, Sb-based devices co
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::0a7beec61895f5a322d5a24e80ddee4f
https://hal.archives-ouvertes.fr/hal-02445097
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3
Geometry and bias dependence of trapping effects in planar GaN nanodiodes
Autor: Sánchez Martín, Héctor, García Pérez, Óscar Alberto, Íñiguez-de-la-Torre, Ignacio, Pérez Santos, María Susana, Mateos López, Javier, González Sánchez, Tomás, Gaquiere, Christophe
Publikováno v: GREDOS. Repositorio Institucional de la Universidad de Salamanca
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[EN]Pulsed and transient measurements performed in planar nanodiodes fabricated on an AlGaN/GaN heterolayer reveal the influence of surface and bulk traps on the I-V characteristic and AC impedance. Rectangular and V-shape diodes of different lengths
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::287d177376632d429550a9e8c8681556
https://hdl.handle.net/10366/133422
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4
Mejora de la docencia práctica de asignaturas con contenidos de electrónica digital
Autor: García Sánchez, Sergio, García Pérez, Óscar Alberto, Pérez Santos, María Susana, Mateos López, Javier
Publikováno v: GREDOS. Repositorio Institucional de la Universidad de Salamanca
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Memoria ID-0320. Ayudas de la Universidad de Salamanca para la innovación docente, curso 2014-2015.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::ceb668b563f385fee852d126d843fbda
https://hdl.handle.net/10366/126915
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5
Supramolecular structures with luminescent properties. Molecular recognition studies
Autor: Mateos López, Javier
Publikováno v: Dipòsit Digital de la UB
Universidad de Barcelona
Treballs Finals de Grau de Química, Facultat de Química, Universitat de Barcelona, Any: 2016, Tutor: Laura Rodríguez Raurell
Supramolecular fluorescent chemosensors in water are very appealing because luminescence exhibits low detection limit
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2e2a012ae267efb0651c335106b923ed
http://hdl.handle.net/2445/101022
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6
Electrónica digital: adquisición de material para la docencia práctica
Autor: Pérez Santos, María Susana, Mateos López, Javier, González Sánchez, Tomás, García Pérez, Óscar Alberto
Publikováno v: GREDOS. Repositorio Institucional de la Universidad de Salamanca
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Memoria ID-0160. Ayudas de la Universidad de Salamanca para la innovación docente, curso 2015-2016.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::cdce53a43af59891a035203cbf2a4e85
https://hdl.handle.net/10366/131515
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8
Numerical study of sub-millimeter Gunn oscillations in InP and GaN vertical diodes: Dependence on bias, doping, and length
Autor: García Sánchez, Sergio, Íñiguez-de-la-Torre, Ignacio, Pérez Santos, María Susana, Mateos López, Javier, González Sánchez, Tomás
Publikováno v: GREDOS. Repositorio Institucional de la Universidad de Salamanca
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In this work, we report on Monte Carlo simulations of InP and GaN vertical Gunn diodes to optimize their oscillation frequency and DC to AC conversion efficiency. We show that equivalent operating conditions are achieved by the direct application of
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::bfd7ac97e7e191bb28956cfb2cada96c
https://hdl.handle.net/10366/122099
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9
Effects of a high-k dielectric on the performance of III-V Ballistic Deflection Transistors
Autor: Kaushal, Vikas, Íñiguez-de-la-Torre, Ignacio, González Sánchez, Tomás, Mateos López, Javier, Lee, Bongmook, Misra, Veena, Margala, Martin
Publikováno v: GREDOS. Repositorio Institucional de la Universidad de Salamanca
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This letter presents a first successful integration of a high-k dielectric, Al2O3, with III-V semiconductors in ballistic deflection transistors (BDT). The Al2O3 is deposited by means of atomic layer deposition allowing the formation of uniform layer
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::e32eff6b41b625f38089f89c8b3b06cc
https://hdl.handle.net/10366/122106
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10
Plasma enhanced terahertz rectification and noise in InGaAs HEMTs
Autor: Mateos López, Javier, González Sánchez, Tomás
Publikováno v: GREDOS. Repositorio Institucional de la Universidad de Salamanca
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In this work we explore high frequency collective phenomena present in InGaAs HEMTs which lead to a peak in the current noise spectrum and enhance their DC response to THz signals, thus originating a resonance in the rectification of AC signals. Thes
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::f531583226e9caf566c4a1e150fd10e3
https://hdl.handle.net/10366/122102
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