Zobrazeno 1 - 10
of 222
pro vyhledávání: '"Mastro M"'
Autor:
Mastro, M. A., Holm, R. T., Bassim, N. D., Eddy Jr., C. R., Gaskill, D. K., Henry, R. L., Twigg, M. E.
Publikováno v:
Applied Physics Letters 87(24):241103 - 241103-3, 2005
Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growing the DBR directly on the Si substrate to enhance the overall reflecta
Externí odkaz:
http://arxiv.org/abs/2009.01635
Autor:
Mastro, M. A., Holm, R. T., Bassim, N. D., Gaskill, D. K., Culbertson, J. C., Fatemi, M., Eddy Jr., C. R., Henry, R. L., Twigg, M. E.
Publikováno v:
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films 24(4), 2006
High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first time for an AlN/GaN DBR with a stop-band centered in the blue-green r
Externí odkaz:
http://arxiv.org/abs/2009.01207
Autor:
Mastro, M. A., Holm, R. T., Bassim, N. D., Eddy, Jr., C. R., Henry, R. L., Twigg, M. E., Rosenberg, A.
Publikováno v:
Japanese Journal of Applied Physics 45(29-32), 2006
Distributed Bragg reflectors (DBRs) composed of an AlN/GaN superlattice were demonstrated for the first time on Si (100) substrates. Single-crystal wurtzite superlattice structures were achieved on this cubic substrate by employing offcut Si (100) wa
Externí odkaz:
http://arxiv.org/abs/2009.01198
Autor:
Mastro, M. A., Hite, J. K., Eddy, Jr., C. R., Tadjer, M. J., Pearton, S. J., Ren, F., Kim, J.
Publikováno v:
International Journal of High Speed Electronics and Systems 28(01n02):1940007, February 2019
Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga
Externí odkaz:
http://arxiv.org/abs/2009.01117
Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6902cb2fcb39d50da56796bd1bbf71c
Akademický článek
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Autor:
Scimeca, D., Mocciaro, F., Amata, M., Bonaccorso, A., Conte, E., Mastro, M. Lo, D’Agostino, D., Scrivo, B., Calì, A., Di Mitri, R.
Publikováno v:
In Digestive and Liver Disease May 2022 54 Supplement 2:S121-S122