Zobrazeno 1 - 10
of 96
pro vyhledávání: '"Massoud Dousti"'
Publikováno v:
Iranian Journal of Electrical and Electronic Engineering, Vol 20, Iss 1, Pp 83-93 (2024)
The scaling limitations of Complementary Metal-Oxide-Semiconductor (CMOS) transistors to achieve better performance have led to the attention of other structures to improve circuit performance. One of these structures is multi-valued circuits. In thi
Externí odkaz:
https://doaj.org/article/22d5cf1a625e4baf819e4e376de127c1
Publikováno v:
ETRI Journal, Vol 45, Iss 4, Pp 690-703 (2023)
Multistage amplifiers have become appropriate choices for high-speed electronics and data conversion. Because of the large number of high-impedance nodes, frequency compensation has become the biggest challenge in the design of multistage amplifiers.
Externí odkaz:
https://doaj.org/article/d1314098a4fb4d22a59b0e9aff4e2310
Publikováno v:
IEEE Access, Vol 9, Pp 71968-71978 (2021)
A circuit with a low-power low-noise amplifier and a Gm-C ultra-low-power filter is proposed in this paper for portable electroencephalogram (EEG) acquisition applications. The proposed circuit contains a two-stage chopper-stabilized fully recycling
Externí odkaz:
https://doaj.org/article/0ccad27c2eb746a7b49e91d3cf9a7cc4
Publikováno v:
IET Circuits, Devices & Systems. 16:581-597
Publikováno v:
Frontiers of Information Technology & Electronic Engineering. 23:1264-1276
Publikováno v:
Circuits, Systems, and Signal Processing. 41:4210-4237
Publikováno v:
International Journal of Circuit Theory and Applications.
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
Frontiers of Information Technology & Electronic Engineering. 22:1541-1550
Adders are one of the most widely used circuits in microprocessors. These circuits can also be used in various arithmetic operators. Adders are generally made in standard CMOS technology. However, at the nanoscale, CMOS technology faces some issues,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a140a1150176e56dfe2247862ac61ee7
https://doi.org/10.21203/rs.3.rs-2388793/v1
https://doi.org/10.21203/rs.3.rs-2388793/v1