Zobrazeno 1 - 10
of 95
pro vyhledávání: '"Massoud, H.Z"'
Publikováno v:
In Microelectronic Engineering 1999 48(1):295-298
The effects of Ge content in poly-Si 1− xGe x gate material on the tunneling barrier in PMOS devices
Autor:
Shanware, A, Massoud, H.Z, Acker, A, Li, V.Z.-Q, Mirabedini, M.R, Henson, K, Hauser, J.R, Wortman, J.J
Publikováno v:
In Microelectronic Engineering 1999 48(1):39-42
Autor:
Ybarra, G.A., Collins, L.M., Huettel, L.G., Massoud, H.Z., Board, J.A., Brooke, M., Jokerst, N.M., Roy Choudhury, R., Gustafson, M.R., Willett, R.M., Coonley, K.
Publikováno v:
2009 39th IEEE Frontiers in Education Conference; 2009, p1-7, 7p
Autor:
Shanware, A., Shiely, J.P., Massoud, H.Z., Vogel, E., Henson, K., Srivastava, A., Osburn, C., Hauser, J.R., Wortman, J.J.
Publikováno v:
International Electron Devices Meeting 1999 Technical Digest (Cat No99CH36318); 1999, p815-818, 4p
Publikováno v:
1998 IEEE International Reliability Physics Symposium Proceedings 36th Annual (Cat No98CH36173); 1998, p70-75, 6p
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits & Systems; 1989, Vol. 8 Issue 4, p323-335, 13p
Publikováno v:
IEEE Transactions on Biomedical Engineering; 1992, Vol. 39 Issue 3, p271-279, 9p
Autor:
Deaton, R., Massoud, H.Z.
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing; 1992, Vol. 5 Issue 4, p347-358, 12p
Publikováno v:
Review of Scientific Instruments; Nov96, Vol. 67 Issue 11, p3954, 4p, 4 Diagrams