Zobrazeno 1 - 10
of 442
pro vyhledávání: '"Massler, H."'
Publikováno v:
In Microelectronics Journal August 2012 43(8):562-568
Autor:
Kallfass, I., Dan, J., Rey, S., Harati, P., Antes, J., Tessmann, A., Wagner, S., Kuri, M., Weber, R., Massler, H., Leuther, A., Merkle, T., Kürner, T.
This contribution presents a full MMIC chip set, transmit and receive RF frontend and data transmission experiments at a carrier frequency of 300GHz and with data rates of up to 64Gbit/s. The radio is dedicated to future high data rate indoor wireles
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::5f8549e9d5695cf0f08f3227e9e3183c
https://publica.fraunhofer.de/handle/publica/242172
https://publica.fraunhofer.de/handle/publica/242172
Autor:
Seelmann-Eggebert, M., Aja, B., Baldischweiler, B., Moschetti, G., Massler, H., Bruch, D., Schlechtweg, M., Ambacher, O.
In this paper, we discuss the experimental determination of noise parameters for high-electron-mobility transistor (HEMT) devices and analyze the problems encountered with conventional extraction techniques. HEMT devices are distinguished by a very s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::7e33dc95156e4e2b32e5f80db1b58be2
https://publica.fraunhofer.de/handle/publica/239397
https://publica.fraunhofer.de/handle/publica/239397
Autor:
Tessmann, A., Hurm, V., Leuther, A., Massler, H., Weber, R., Kuri, M., Riessle, M., Stulz, H.-P., Zink, M., Schlechtweg, M., Ambacher, O., Närhi, T.
Two compact H-band (220-325 GHz) low-noise amplifier MMICs have been developed, based on a grounded coplanar waveguide (GCPW) technology utilizing 50 and 35 nm metamorphic high electron mobility transistors (mHEMTs). For low-loss packaging of the cir
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::d8659591101e24353ad03fe630f89e90
https://publica.fraunhofer.de/handle/publica/236183
https://publica.fraunhofer.de/handle/publica/236183
Akademický článek
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Akademický článek
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Autor:
Diebold, S., Ayhan, S., Scherr, S., Massler, H., Tessmann, A., Leuther, A., Ambacher, O., Zwick, T., Kallfass, I.
In medical and personal health systems for vital sign monitoring, contact-free remote detection is favourable compared to wired solutions. For example, they help to avoid severe pain, which is involved when a patient with burned skin has to be examin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::47e39d0e4edfa6f261704cf702c324a4
https://publica.fraunhofer.de/handle/publica/229675
https://publica.fraunhofer.de/handle/publica/229675
Autor:
Heijningen, M., Rodenburg, M., Vliet, F. E., Massler, H., Tessmann, A., Bruckner, P., Muller, S., Schwantuschke, D., Rüdiger Quay, Narhi, T.
Publikováno v:
15th European Microwave Week 2012, EuMW2012: Space for Microwaves-Proceedings of the 7th European Microwave Integrated Circuits Conference, EuMIC 2012, 29-30 October 2012, Amsterdam, The Netherlands
Scopus-Elsevier
Scopus-Elsevier
The 0.1 μm AlGaN/GaN technology and design of two W-band power amplifiers in this technology are described. The dual-stage amplifier reaches an output power of 400 mW at 90 GHz at an operation bias of 20 V. Two designs with different driver to final
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::508a5f12809d349df574fdaf32c97dbe
http://resolver.tudelft.nl/uuid:4c41d3e6-9bf9-4cdc-806f-080632cb8169
http://resolver.tudelft.nl/uuid:4c41d3e6-9bf9-4cdc-806f-080632cb8169
Two frequency-tripler monolithic microwave integrated circuits (MMICs) reaching sub-millimeter-wave output frequencies of 315 GHz are presented. The convenient integration of transistor-based field effect transistor (FET) frequency multipliers into m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::965e43c9f9ab30d5ee3957af9786310b
https://publica.fraunhofer.de/handle/publica/228569
https://publica.fraunhofer.de/handle/publica/228569
A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a 180° power divider structure consisting of a Lange coupler followed by a lambda/4 transmission line (at local oscillat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::67a7d732566fe11e286d66bb50e8c6f2
https://publica.fraunhofer.de/handle/publica/225884
https://publica.fraunhofer.de/handle/publica/225884