Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Massimo Maretto"'
Autor:
Gaudenzio Meneghesso, Massimo Maretto, Giovanni Massari, Andrea Bortoletto, Enrico Zanoni, D. Buttari
Publikováno v:
Scopus-Elsevier
The BVDS–ID breakdown characteristics of MESFET and HEMT devices measured at constant gate current are correlated with conventional measurements of gate current due to impact-ionization. The influence of thermal effects on breakdown DC measurements
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d53e331ef8d940e4602c41670436bab
https://doi.org/10.1016/s0026-2714(99)00182-1
https://doi.org/10.1016/s0026-2714(99)00182-1
Publikováno v:
Scopus-Elsevier
We measured the on-state breakdown of HEMTs in a nondestructive way using the Transmission Line Pulse technique reaching very high values of gate current density (30 mA/mm). On the basis of the experimental observations, we developed a new model for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f5baf0c659e87a97c7952472bace81ac
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033741691&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0033741691&partnerID=MN8TOARS
Conference
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Publikováno v:
IEEE Transactions on Electron Devices; Feb2003, Vol. 50 Issue 2, p324, 9p, 3 Black and White Photographs, 2 Diagrams, 17 Graphs