Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Massimo Liverani"'
Autor:
Giacomo Puccetti, Paola De Vita, Beatrice Pulvirenti, PALMIERI, ALEXANDRO, Giovanni Semprini, Claudio Rossi, Lorenzo Liverani, Massimo Liverani
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4094::1b2b500820456376f551b325a66b70ba
http://hdl.handle.net/11585/627798
http://hdl.handle.net/11585/627798
Autor:
Massimo Liverani, G. Moccia, T. Lippa, Monica Ceresoli, Maria Luisa Polignano, G. Polsinelli, D. Codegoni, P. Pianezza, R. Alfonsetti, Felice Russo, I. Mica, A. Patacchiola, Antonio Domenico D'Angelo, E. Cazzini, G. Nardone, M. Carlini
Publikováno v:
Solid-State Electronics. 91:91-99
In complementary metal–oxide-semiconductor (CMOS) imager sensors, metallic contamination is a critical issue because it induces dark current and increases yield loss. Therefore, the challenge is to identify and eliminate progressively lower doses o
Autor:
Elena Cazzini, Massimo Liverani, Tiberio Lippa, I. Mica, Michele Carlini, Roberto Alfonsetti, Monica Ceresoli, Davide Codegoni, Antonio Domenico D'Angelo, G. Moccia, Giampaolo Polsinelli, Maria Luisa Polignano, Felice Russo, Pio Pianezza, G. Nardone, Antonio Patacchiola
Publikováno v:
Solid State Phenomena. :271-277
In this paper, we test proximity gettering layers obtained by carbon or silicon implantation for their efficiency in molybdenum and tungsten gettering. DLTS was used to measure the impurity concentration in the solid solution and so to evaluate gette