Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Masihhur R. Laskar"'
Autor:
Shenzhen Xu, David H. K. Jackson, Dane Morgan, Masihhur R. Laskar, Robert J. Hamers, Thomas F. Kuech
Publikováno v:
ACS Applied Materials & Interfaces. 9:11231-11239
An ultrathin MgO coating was synthesized via atomic layer deposition (ALD) to improve the surface properties of the Li[Ni0.5Mn0.3Co0.2]O2 (NMC) cathode. An in-situ quartz crystal sensor was used to monitor the "self-limiting" surface reactions during
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::831d017cc03654144679c3e9ffa46bbf
https://doi.org/10.1021/acsami.6b16562
https://doi.org/10.1021/acsami.6b16562
Autor:
Dane Morgan, Robert J. Hamers, David H. K. Jackson, Thomas F. Kuech, Mark Dreibelbis, Yingxin Guan, Mahesh K. Mahanthappa, Masihhur R. Laskar, Shenzhen Xu, Shuyu Fang
Publikováno v:
ACS Applied Materials & Interfaces. 8:10572-10580
Metal oxide coatings can improve the electrochemical stability of cathodes and hence, their cycle-life in rechargeable batteries. However, such coatings often impose an additional electrical and ionic transport resistance to cathode surfaces leading
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9c3d3e41ae29961ef1b74e99170e4e94
https://doi.org/10.1021/acsami.5b11878
https://doi.org/10.1021/acsami.5b11878
Autor:
Masihhur R. Laskar, Roberto C. Myers, Santino D. Carnevale, Brelon J. May, Thomas F. Kent, A. T. M. Golam Sarwar
Publikováno v:
Journal of Crystal Growth. 428:59-70
We report on a systematic growth study of the nucleation process of InN nanowires on Si(1 1 1) substrates using plasma assisted molecular beam epitaxy (PAMBE). Samples are grown with various substrate temperatures and III/V ratios. Scanning electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c56e9d50544e3455d0b610a7e5304a23
https://doi.org/10.1016/j.jcrysgro.2015.07.024
https://doi.org/10.1016/j.jcrysgro.2015.07.024
Autor:
Masihhur R, Laskar, David H K, Jackson, Shenzhen, Xu, Robert J, Hamers, Dane, Morgan, Thomas F, Kuech
Publikováno v:
ACS applied materialsinterfaces. 9(12)
An ultrathin MgO coating was synthesized via atomic layer deposition (ALD) to improve the surface properties of the Li[Ni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::990d0a58e996839daae28d6a74897c1d
https://pubmed.ncbi.nlm.nih.gov/28252289
https://pubmed.ncbi.nlm.nih.gov/28252289
Autor:
A. T. M. Golam Sarwar, Michael J. Mills, Roberto C. Myers, Patrick J. Phillips, Masihhur R. Laskar, Santino D. Carnevale
Publikováno v:
Journal of Electronic Materials. 42:863-867
We report the growth of graded InGaN nanowires by plasma-assisted molecular beam epitaxy. Wire composition is linearly graded from InN to GaN along the length of each wire. The large lattice mismatch between GaN and InN (11%) introduces tensile strai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1357e8d06bdea81673879bc14465f629
https://doi.org/10.1007/s11664-013-2544-9
https://doi.org/10.1007/s11664-013-2544-9
Autor:
A.P. Shah, M. R. Gokhale, Arnab Bhattacharya, A. Azizur Rahman, Masihhur R. Laskar, Nirupam Hatui, Tapas Ganguli, Abdul Kadir
Publikováno v:
Journal of Crystal Growth. 315:233-237
We report a comparative study of the microstructure of a-plane (1 1 2 0) InN epilayers grown on different buffer layers via metalorganic vapour phase epitaxy. Under optimized growth conditions, the crystalline quality of the InN epilayer is found to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d7d96a81a146b8d131dd3be3cb5af36
https://doi.org/10.1016/j.jcrysgro.2010.08.019
https://doi.org/10.1016/j.jcrysgro.2010.08.019
Autor:
A. Azizur Rahman, Arnab Bhattacharya, Nirupam Hatui, Abdul Kadir, A.P. Shah, Masihhur R. Laskar, M. R. Gokhale
Publikováno v:
Journal of Crystal Growth. 312:2033-2037
We have performed a comprehensive investigation of the growth parameter space for the MOVPE of a- plane (11 20) InN on a-plane GaN buffer layers deposited on r-plane (1 102) sapphire substrates. About 0:2 m thick a-plane InN epilayers were grown on 1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc1e5d93163a6efe87ef2ec83c56c0c9
https://doi.org/10.1016/j.jcrysgro.2010.03.042
https://doi.org/10.1016/j.jcrysgro.2010.03.042
Autor:
K.L. Narasimhan, M. R. Gokhale, Neysha Lobo, Brij M. Arora, Abdul Kadir, Arnab Bhattacharya, Masihhur R. Laskar, A. Azizur Rahman, A.P. Shah
Publikováno v:
Journal of Crystal Growth. 310:4747-4750
In this work we have compared the sub-bandgap absorptance of nominally undoped GaN samples grown under different conditions. The absorptance is measured using standard transmission measurements and transverse photothermal deflection spectroscopy (PDS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfb755febc92fc8947b948e0da9f134b
https://doi.org/10.1016/j.jcrysgro.2008.08.022
https://doi.org/10.1016/j.jcrysgro.2008.08.022
Autor:
A. Azizur Rahman, Nirupam Hatui, Arnab Bhattacharya, M. R. Gokhale, Masihhur R. Laskar, Tapas Ganguli
Publikováno v:
Journal of Crystal Growth. 315:208-210
We report a comprehensive characterization of the microstructure of non-polar ( 1 1 2 ¯ 0 ) a -plane Al x Ga 1− x N epilayers on ( 1 1 ¯ 0 2 ) r -plane sapphire substrates over the entire Al composition range using high-resolution X-ray diffracti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dff067a1359757246c0c4de00c58e6ef
https://doi.org/10.1016/j.jcrysgro.2010.09.003
https://doi.org/10.1016/j.jcrysgro.2010.09.003
Autor:
Scott A. Poehler, Siddharth Rajan, Yiying Wu, Yuji Wang, Xinhang Luo, Masihhur R. Laskar, Wu Lu, Lu Ma
Publikováno v:
72nd Device Research Conference.
Molybdenum disulphide (MoS 2 ), a layered metal dichalcogenide material, has attracted significant attention recently for potential application in next-generation electronics, light detection and emission, and chemical sensing due to its unique elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0afd83ea88135f556648bfc6537fb35c
https://doi.org/10.1109/drc.2014.6872296
https://doi.org/10.1109/drc.2014.6872296