Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Masiar, Sistani"'
Autor:
Andreas Fuchsberger, Lukas Wind, Daniele Nazzari, Alexandra Dobler, Johannes Aberl, Enrique Prado Navarrete, Moritz Brehm, Lilian Vogl, Peter Schweizer, Sebastian Lellig, Xavier Maeder, Masiar Sistani, Walter M. Weber
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 541-547 (2024)
A promising approach to advance electronics beyond static operations is to enhance state-ofthe- art systems by the functional diversification of transistors. Here, we experimentally demonstrate that an ultra-thin Ge channel implemented on a Si on ins
Externí odkaz:
https://doaj.org/article/65488fbb9de04393b83e8d339e62fc90
Autor:
Andreas Fuchsberger, Lukas Wind, Daniele Nazzari, Larissa Kuhberger, Daniel Popp, Johannes Aberl, Enrique Prado Navarrete, Moritz Brehm, Lilian Vogl, Peter Schweizer, Sebastian Lellig, Xavier Maeder, Masiar Sistani, Walter M. Weber
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 83-87 (2024)
Here, we present a Ge based reconfigurable transistor, capable of dynamic run-time switching between n- and p-type operation with enhanced performance compared to state-of-the- art Si devices. Thereto, we have monolithically integrated an ultra-thin
Externí odkaz:
https://doaj.org/article/16ff7e9f84d742d487e8c8349d88f41c
Autor:
Lukas Wind, Raphael Behrle, Martien I. denHertog, Corban G. E. Murphey, James F. Cahoon, Masiar Sistani, Walter M. Weber
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 2, Pp n/a-n/a (2024)
Abstract In this work, bottom‐up Al–Si–Al nanowire (NW) heterostructures are presented, which act as a prototype vehicle toward top‐down fabricated nanosheet (NS) and multi‐wire (MW) reconfigurable field‐effect transistors (RFETs). Evalua
Externí odkaz:
https://doaj.org/article/9e11170236fe45ffa68aefa54757dfa9
Autor:
Luong, Minh Anh, Eric, Robin, Nicolas, Pauc, Pascal, Gentile, Thierry, Baron, Bassem, Salem, Masiar, Sistani, Alois, Lugstein, Maria, Spies, Bruno, Fernandez, Hertog, M. den
While reversibility is a fundamental concept in thermodynamics, most reactions are not readily reversible, especially in solid state physics. For example, thermal diffusion is a widely known concept, used among others to inject dopant atoms into the
Externí odkaz:
http://arxiv.org/abs/2002.02373
Autor:
Daniele Nazzari, Jakob Genser, Masiar Sistani, Maximilian G. Bartmann, Xavier Cartoixà, Riccardo Rurali, Walter M. Weber, Alois Lugstein
Publikováno v:
APL Materials, Vol 11, Iss 11, Pp 111123-111123-7 (2023)
2D materials provide a rapidly expanding platform for the observation of novel physical phenomena and for the realization of cutting-edge optoelectronic devices. In addition to their peculiar individual characteristics, 2D materials can be stacked in
Externí odkaz:
https://doaj.org/article/01c46826958e4529a981569ca15f77c7
Autor:
Andreas Fuchsberger, Lukas Wind, Masiar Sistani, Raphael Behrle, Daniele Nazzari, Johannes Aberl, Enrique Prado Navarrete, Lada Vukŭsić, Moritz Brehm, Peter Schweizer, Lilian Vogl, Xavier Maeder, Walter M. Weber
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 6, Pp n/a-n/a (2023)
Abstract Reconfigurable field‐effect transistors, capable of being dynamically programmed during run‐time, overcome the static nature of conventional complementary metal‐oxide semiconductors by reducing the transistor count and the circuit path
Externí odkaz:
https://doaj.org/article/fab59ec6009b437d8bb1cb383c08d31f
Autor:
Raphael Böckle, Masiar Sistani, Martina Bažíková, Lukas Wind, Zahra Sadre‐Momtaz, Martien I. den Hertog, Corban G. E. Murphey, James F. Cahoon, Walter M. Weber
Publikováno v:
Advanced Electronic Materials, Vol 9, Iss 1, Pp n/a-n/a (2023)
Abstract Metal‐semiconductor heterostructures providing geometrically reproducible and abrupt Schottky nanojunctions are highly anticipated for the realization of emerging electronic technologies. This specifically holds for reconfigurable field‐
Externí odkaz:
https://doaj.org/article/e3760d4850944539be29483ab06928ad
Autor:
Raphael Behrle, Vanessa Krause, Michael S. Seifner, Benedikt Köstler, Kimberly A. Dick, Matthias Wagner, Masiar Sistani, Sven Barth
Publikováno v:
Nanomaterials, Vol 13, Iss 4, p 627 (2023)
Si1−xGex nanowires (NWs) were prepared by gold-supported chemical vapor deposition (CVD) using a single-source precursor with preformed Si–Ge bonds. Besides the tamed reactivity of the precursor, the approach reduces the process parameters associ
Externí odkaz:
https://doaj.org/article/44311cb7d6dd4c12954c2868d9f41926
Autor:
Benedikt Köstler, Felix Jungwirth, Luisa Achenbach, Masiar Sistani, Michael Bolte, Hans-Wolfram Lerner, Philipp Albert, Matthias Wagner, Sven Barth
Publikováno v:
Inorganic Chemistry. 61:17248-17255
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9821de442fd2b526207d4c1eca596de3
https://doi.org/10.1021/acs.inorgchem.2c02835
https://doi.org/10.1021/acs.inorgchem.2c02835
Autor:
Felix Jungwirth, Fabrizio Porrati, Daniel Knez, Masiar Sistani, Harald Plank, Michael Huth, Sven Barth
Publikováno v:
ACS Applied Nano Materials. 5:14759-14770
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d84721272db3853369d79e53215d914
https://doi.org/10.1021/acsanm.2c03074
https://doi.org/10.1021/acsanm.2c03074