Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Masazumi Koike"'
Autor:
Yoji Kawasaki, Mitsuaki Kabasawa, Sho Kawatsu, Kazutaka Tsukahara, Hiroyuki Kariya, Masazumi Koike, Makoto Sano
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
This paper will examine the influence of ion angle deviation (IAD) on sheet resistance. The IAD is derived from the beam intensity profile measured in the MC3-II/GP medium current implanter. IAD is controlled independently in the horizontal and verti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9714f048e71476bd61469a0644f0936
https://doi.org/10.1109/iit.2016.7882905
https://doi.org/10.1109/iit.2016.7882905
Autor:
Makoto Sano, Yoji Kawasaki, Sho Kawatsu, Masazumi Koike, Hiroyuki Kariya, Mitsuaki Kabasawa, Toshiki Miyake, Kazutaka Tsukahara
Publikováno v:
2016 21st International Conference on Ion Implantation Technology (IIT).
In ion implantation, repeatability of sheet resistances (Rs) is indispensable for process stability monitoring. In the course of process development, we found Rs instability in some implant conditions such as B, 7keV, and 9E13cm2 with tilt of 7
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::17ca1dd65e1ecd7c6a388c6c4fb58e00
https://doi.org/10.1109/iit.2016.7882891
https://doi.org/10.1109/iit.2016.7882891
Autor:
Takahashi Yuji, Makoto Sano, Masamitsu Shinozuka, Kazuyoshi Ueno, Miyuki Shiraishi, Mitsukuni Tsukihara, Tetsuya Kudo, Michiro Sugitani, Yasuhiko Kimura, Masazumi Koike, Hiroyuki Kariya, Fumiaki Sato, Sho Kawatsu, Yuji Ishida
Publikováno v:
AIP Conference Proceedings.
The MC3-II/GP is a leading-edge single-wafer medium-current ion implanter, newly developed by SEN Corporation. It demonstrates exceptional productivity based on a high speed wafer-handling station and enhanced beam current. It covers a substantively
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e0b2add7ec1c5d7088d0943662a09e4
https://doi.org/10.1063/1.4766557
https://doi.org/10.1063/1.4766557
Autor:
Noriyuki Suetsugu, Kazuyoshi Ueno, Yoshiaki Ookita, Yasuharu Okamoto, Mitsukuni Tsukihara, Fumiaki Sato, Akihiro Ochi, Tetsuya Kudo, Genshu Fuse, Tatsuya Yamada, Yusuke Ueno, Shiro Ninomiya, Michiro Sugitani, Yasuhiko Kimura, Masazumi Koike
Publikováno v:
AIP Conference Proceedings.
Electrical characteristics of semi-conductor devices within a wafer are expected to be uniform based on control of the dose pattern during the ion implant process. SEN developed the MIND system (Mapping of Intentional Non-uniform Dosage), to provide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89602fa9d67630fa08d410c294c1122e
https://doi.org/10.1063/1.4766560
https://doi.org/10.1063/1.4766560
Autor:
Michiro Sugitani, Fumiaki Sato, Masazumi Koike, Makoto Sano, Kazuyoshi Ueno, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
The MC3‐II/WR is a medium‐current ion implanter, newly developed by SEN Corporation. The most significant change from the original MC3‐II is an expansion of its energy coverage with an extended terminal voltage from 260 kV to 320 kV. This expan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e7ba3036ff8e628687c7d0e4b42fc0c
https://doi.org/10.1063/1.3033610
https://doi.org/10.1063/1.3033610
Autor:
Fumiaki Sato, Makoto Sano, Hiroaki Nakaoka, Yoshito Fujii, Tetuya Kudo, Makoto Nakanishi, Masazumi Koike, Yasushi Fujino, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
Precise implant angle control is required for the latest generation of ion implanters to meet further shrink semiconductor device requirements. Especially, the highest angle accuracy is required for Halo implant process of Logic devices. The Halo imp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb61cd095bd8ff0cb6648556e830ce56
https://doi.org/10.1063/1.3033618
https://doi.org/10.1063/1.3033618