Zobrazeno 1 - 10
of 119
pro vyhledávání: '"Masayuki Imanishi"'
Autor:
Takeaki Hamachi, Tetsuya Tohei, Yusuke Hayashi, Masayuki Imanishi, Shigeyoshi Usami, Yusuke Mori, Akira Sakai
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-14 (2023)
Abstract The electrical characteristics of Schottky contacts on individual threading dislocations (TDs) with a screw-component in GaN substrates and the structures of these TDs were investigated to assess the effects of such defects on reverse leakag
Externí odkaz:
https://doaj.org/article/83677874ee45481488b4e35add2d0834
Autor:
Mihoko Maruyama, Koichi P. Sawada, Yutaro Tanaka, Atsushi Okada, Koichi Momma, Masanori Nakamura, Ryota Mori, Yoshihiro Furukawa, Yuki Sugiura, Rie Tajiri, Kazumi Taguchi, Shuzo Hamamoto, Ryosuke Ando, Katsuo Tsukamoto, Kazufumi Takano, Masayuki Imanishi, Masashi Yoshimura, Takahiro Yasui, Yusuke Mori
Publikováno v:
PLoS ONE, Vol 18, Iss 3 (2023)
We sought to identify and quantitatively analyze calcium oxalate (CaOx) kidney stones on the order of micrometers, with a focus on the quantitative identification of calcium oxalate monohydrate (COM) and dihydrate (COD). We performed Fourier transfor
Externí odkaz:
https://doaj.org/article/d0896078e4d1470abf92bb72349ec83e
Autor:
Verdad C. Agulto, Toshiyuki Iwamoto, Hideaki Kitahara, Kazuhiro Toya, Valynn Katrine Mag-usara, Masayuki Imanishi, Yusuke Mori, Masashi Yoshimura, Makoto Nakajima
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract Gallium nitride (GaN) is one of the most technologically important semiconductors and a fundamental component in many optoelectronic and power devices. Low-resistivity GaN wafers are in demand and actively being developed to improve the perf
Externí odkaz:
https://doaj.org/article/763dd210632d425e936ddcb1a042cc24
Autor:
Hiroki Fukuda, Akira Nagakubo, Shigeyoshi Usami, Masayuki Imanishi, Yusuke Mori, Hirotsugu Ogi
Publikováno v:
Applied Physics Express, Vol 17, Iss 1, p 016501 (2023)
Oxide vapor phase epitaxy (OVPE) has attracted much attention as a highly efficient method for synthesizing high-quality bulk GaN crystals, but the mechanical properties of OVPE GaN have not been clarified. We measured the five independent elastic co
Externí odkaz:
https://doaj.org/article/b01f3c8281934ac9871ec74fb1670278
Autor:
Akari Nishigaki, Mihoko Maruyama, Shun-ichi Tanaka, Hiroshi Y. Yoshikawa, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Kazufumi Takano
Publikováno v:
Crystals, Vol 12, Iss 8, p 1104 (2022)
It has been reported that cavitation bubbles (air–liquid interface) by femtosecond laser and ultrasonic irradiations are effective for metastable phase crystallization in polymorph control. It has also been noted that cavitation bubbles are generat
Externí odkaz:
https://doaj.org/article/30413c90981e4cc7b4d1ec6b0991bc07
Publikováno v:
IEEE Access, Vol 7, Pp 93326-93338 (2019)
This paper presents a deep learning-aided iterative detection algorithm for massive overloaded multiple-input multiple-output (MIMO) systems where the number of transmit antennas $n$ is larger than that of receive antennas $m$ . Since the proposed al
Externí odkaz:
https://doaj.org/article/099f2399a7eb4e62bb15930f99b2f59a
Autor:
Akari Nishigaki, Mihoko Maruyama, Shun-ichi Tanaka, Hiroshi Y. Yoshikawa, Masayuki Imanishi, Masashi Yoshimura, Yusuke Mori, Kazufumi Takano
Publikováno v:
Crystals, Vol 11, Iss 9, p 1069 (2021)
The growth of acetaminophen polymorphic crystals and the solution-mediated phase transition from trihydrate to form II in agarose gel were investigated. The form II crystals grown in gels, presumably because of the agarose content, dissolved less rap
Externí odkaz:
https://doaj.org/article/42c13e269c304e6e95ac4ede435e2391
Autor:
Mihoko Maruyama, Yutaro Tanaka, Koichi Momma, Yoshihiro Furukawa, Hiroshi Y. Yoshikawa, Rie Tajiri, Masanori Nakamura, Kazumi Taguchi, Shuzo Hamamoto, Ryosuke Ando, Katsuo Tsukamoto, Kazufumi Takano, Masayuki Imanishi, Shigeyoshi Usami, Kenjiro Kohri, Atsushi Okada, Takahiro Yasui, Masashi Yoshimura, Yusuke Mori
Publikováno v:
Crystal Growth & Design.
Autor:
Ricksen Tandryo, Koichi Itozawa, Kosuke Murakami, Hitoshi Kubo, Masayuki Imanishi, Shigeyoshi Usami, Mihoko Maruyama, Masashi Yoshimura, Yusuke Mori
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9fe8a1df9b9efa894384eca6c7a2cdc
https://doi.org/10.2139/ssrn.4395641
https://doi.org/10.2139/ssrn.4395641
Autor:
Toshiyuki Iwamoto, Makoto Nakajima, Verdad C. Agulto, Masashi Yoshimura, Valynn Katrine Mag-usara, Masayuki Imanishi, Kazuhiro Toya, Hideaki Kitahara, Yusuke Mori
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Gallium nitride (GaN) is one of the most technologically important semiconductors and a fundamental component in many optoelectronic and power devices. Low-resistivity GaN wafers are in demand and actively being developed to improve the performance o