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pro vyhledávání: '"Masayuki Imaizumi"'
Akademický článek
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Autor:
Yoko Matsuda, Tomio Arai, Masayuki Imaizumi, Shikine Esaka, Hiroya Kojima, Akemi Suzuki, Yuri Hamashima, Keisuke Nonaka, Yuri Kimura, Yuri Kiso, Hiroto Shirahata
Publikováno v:
The Journal of the Japanese Society of Clinical Cytology. 59:165-173
Autor:
Kaiyo Takubo, Yuri Hamashima, Junko Aida, Toshiyuki Ishiwata, Masayuki Imaizumi, Makoto Nishimura, Miho Matsukawa, Yoko Matsuda, Tomio Arai, Shikine Esaka, Yuko Fujii, Akemi Suzuki
Publikováno v:
Cytopathology. 30:201-208
Background Accurate diagnosis of malignant and benign pancreatic lesions can be challenging, especially with endoscopic ultrasound-guided fine needle aspiration (EUS-FNA) samples that are small and/or degraded. In the present study, we determined how
Autor:
Hiroto Shirahata, Shikine Esaka, Akemi Suzuki, Mayumi Kinoshita, Yuri Hamashima, Masayuki Imaizumi, Yoko Matsuda, Hiroya Kojima, Yuri Kiso, Tomio Arai
Publikováno v:
The Journal of the Japanese Society of Clinical Cytology. 57:199-212
Autor:
Hatta Hideyuki, Shigehisa Yamamoto, Satoshi Yamakawa, Yasuki Yamamoto, Koji Sadamatsu, Masayuki Imaizumi, Shuhei Nakata, T. Iwamatsu, Shiro Hino, Y. Nagahisa
Publikováno v:
Materials Science Forum. 897:477-482
External Schottky barrier diodes (SBD) are generally used to suppress the conduction of the body diode of MOSFET. A large external SBD is required for a high voltage module because of its high specific resistance, while the forward voltage of SBD sho
Autor:
Tomio Arai, Mayumi Kinoshita, Takashi Kotani, Hiroto Shirahata, Shikine Esaka, Urara Sakurai, Naoko Honma, Yuri Hamashima, Masayuki Imaizumi, Akemi Suzuki
Publikováno v:
The Journal of the Japanese Society of Clinical Cytology. 56:75-84
Publikováno v:
Materials Science Forum. 858:829-832
High threshold voltage low loss 600 V 4H-SiC MOSFETs have been fabricated successfully using a re-oxidation technique for gate oxides and an n-type doping in the Junction Field Effect Transistor region of the MOSFET with shrunk MOS cells. The MOSFET
Autor:
Eisuke Suekawa, Masayoshi Tarutani, Shigehisa Yamamoto, Masayuki Imaizumi, Yuji Ebiike, Takeshi Murakami, Hiroaki Sumitani
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
3.3 kV 4H-SiC MOSFETs with various buffer layer thickness has been fabricated in order to investigate the bipolar degradation associated with the expansion of stacking faults (SFs). The body diode stress tests under DC current of 240 A/cm2 were perfo
Autor:
Nobuo Fujiwara, Shuhei Nakata, Rina Tanaka, Yasuhiro Kagawa, Fukui Yutaka, Masayuki Imaizumi, Naruhisa Miura, Satoshi Yamakawa, Katsutoshi Sugawara
Publikováno v:
Materials Science Forum. :761-764
This paper investigates thereduction of parasitic resistance (JFET resistance) betweenthe p-well and the grounded p-type gate-oxide protection layer (BPW)of a trench-gate SiC-MOSFET. Forming a deeptrench is a way to reducethe JFET resistance, but thi
Autor:
Sakai Masashi, Nobuyuki Tomita, Masayoshi Tarutani, Yoichiro Mitani, Naoyuki Kawabata, Takeharu Kuroiwa, Hiroaki Sumitani, Takanori Tanaka, Masayuki Imaizumi, Yoshihiko Toyoda, Satoshi Yamakawa
Publikováno v:
Materials Science Forum. :133-136
The reduction of the growth pressure was demonstrated to have the same effect as the addition of chloride-containing gas on preventing the Si nucleation and the epitaxy with high growth rate (>50 μm/h) was achieved by using the decreasing pressure c