Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Masayuki Ichige"'
Autor:
Hiroko , FUTAGAMI, Masayuki , ICHIGE, Shigeyoshi , NOBORIMOTO, Jun , HAMADA, Haruhiko , SHIOKAWA, Yoshitada, SHIBOI
Publikováno v:
帝京科学大学紀要 = Bulletin of Teikyo University of Science. 9:57-62
We conducted a questionnaire survey of the visitors to the Judo Therapy booth at the Open Campus events and the studentsof the faculty of Judo Therapy. The questionnaire had two main sections: 1) asking whether they have experiences of playingsports
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::623fe1b3260d271ff791180cbaf83d21
http://id.nii.ac.jp/1409/00000081/
http://id.nii.ac.jp/1409/00000081/
Autor:
Masayuki , ICHIGE, Hiroko , FUTAGAMI, Jun , HAMADA, Shigeyoshi , NOBORIMOTO, Yoshitada, SHIBOI
Publikováno v:
帝京科学大学紀要 = Bulletin of Teikyo University of Science. 9:165-170
The Tokyo Faculty of Judo Therapy, which has an athletics trainer course, carried out several projects related to sportsinjuries. The projects had several purposes:( 1) to contribute to society by providing the knowledge about the ways to treatand pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::c20c6e8eab819b4b24f335862d5b26cb
http://id.nii.ac.jp/1409/00000095/
http://id.nii.ac.jp/1409/00000095/
Autor:
Koji Hosono, M. Kojima, Shigeo Ohshima, Susumu Fujimura, Shouchang Tsao, N. Hayashida, H. Waki, Ken Oowada, Jeffrey W. Lutze, Makoto Iwai, G. Hemink, Kiyofumi Sakurai, H. Otake, Sumio Tanaka, Mehrdad Mofidi, Shih-Chung Lee, Y. Nozawa, Yohji Watanabe, Y. Kameda, Ken Takeuchi, Jun Wan, Masanobu Shirakawa, K. Hatakeyama, A. Cernea, Teruhiko Kamei, Yoshihiko Shindo, Hitoshi Shiga, Yan Li, Takuya Futatsuyama, Jia-Yi Fu, Masaaki Higashitani, Masayuki Ichige, K. Kanazawa, Naoya Tokiwa, Shinji Sato
Publikováno v:
IEEE Journal of Solid-State Circuits. 42:219-232
A single 3.3-V only, 8-Gb NAND flash memory with the smallest chip to date, 98.8 mm2, has been successfully developed. This is the world's first integrated semiconductor chip fabricated with 56-nm CMOS technologies. The effective cell size including
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fab1a92d12aed75d87a83c6649933ac8
https://doi.org/10.1109/jssc.2006.888299
https://doi.org/10.1109/jssc.2006.888299
Autor:
Kimiaki Masuda, Katsuhito Hasuike, Jun Kikuchi, Ken Itoh, Tadayoshi Doke, Masayuki Ichige, Elena Aprile
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 333:355-363
To realize a long attenuation length of drifting electrons in liquid xenon, a purification system which consists of Oxisorb, molecular sieves and a Zr-V-Fe alloy getter has been constructed. A dual type gridded ionization chamber is used for the meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c9fef50a4e08a36bd7fee54df2998db
https://doi.org/10.1016/0168-9002(93)91177-o
https://doi.org/10.1016/0168-9002(93)91177-o
Autor:
Shouchang Tsao, H. Waki, Ken Oowada, K. Hatakeyama, Y. Nozawa, Masanobu Shirakawa, M. Kojima, Y. Kameda, Ken Takeuchi, Makoto Iwai, Koji Hosono, S. Tanaka, Teruhiko Kamei, Jeffrey W. Lutze, Naoya Tokiwa, H. Otake, Yoshihiko Shindo, Shih-Chung Lee, Yohji Watanabe, M. Higashitani, Jia-Yi Fu, Hitoshi Shiga, Shigeo Ohshima, G. Hemink, Susumu Fujimura, N. Hayashida, Shinji Sato, A. Cernea, Jun Wan, Kiyofumi Sakurai, Mehrdad Mofidi, K. Kanazawa, Masayuki Ichige, Yan Li, Takuya Futatsuyama
Publikováno v:
ISSCC
Fabricated in 56nm CMOS technology, an 8Gb multi-level NAND Flash memory occupies 98.8mm2, with a memory cell size of 0.0075mum/b. The 10MB/s programming and 93ms block copy are also realized by introducing 8kB page, noise-cancellation circuits, exte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::596bfbd85fd37d29d66104d3b0e53369
https://doi.org/10.1109/isscc.2006.1696083
https://doi.org/10.1109/isscc.2006.1696083
Autor:
Masayuki Ichige, Atsuhiro Sato, Masaaki Higashitani, M. Momodomi, Hisataka Meguro, Shigeki Takahashi, H. Iizuka, Tadashi Iguchi, R. Shirota, N. Arai, T. Miwa, Takeshi Kamigaichi, N. Kawai, S. Miyazaki, S. Tamon, T. Minami, Michiharu Matsui, Tuan Pham, Yoshiaki Takeuchi, G. Hemink, H. Kamata, Y. Ishibashi, Kikuko Sugimae, Hiroyuki Kutsukake, S. Mori, Masanobu Saito
Publikováno v:
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).
Recently, the new memory structures, those FG and AA are completely self aligned, are qualified for 4Gb NAND flash memory in 90 nm technology node. This paper describes that the new structures and these electrical characteristics and also peripheral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1a39d948fdea82af3af180691174d3b3
https://doi.org/10.1109/vlsit.2003.1221100
https://doi.org/10.1109/vlsit.2003.1221100