Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Masayuki Hiroi"'
Autor:
Hiroyasu Minda, Michio Sakurai, Sadayuki Ohnishi, Hideo Sakamoto, Noriaki Oda, Kenta Yamada, Norio Okada, Manabu Iguchi, Hiroshi Kitahara, Makoto Yasuda, Toshiyuki Takewaki, Masayuki Hiroi, Yoshihiko Asai, M. Suzuki
Publikováno v:
IEICE Transactions on Electronics. :968-977
This paper proposes an accurate modeling method of the copper interconnect cross-section in which the width and thickness dependence on layout patterns and density caused by processes (CMP, etching, sputtering, lithography, and so on) are fully, inco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54a4aba4c31095d4edb34ea17f2f5fd5
https://doi.org/10.1093/ietele/e91-c.6.968
https://doi.org/10.1093/ietele/e91-c.6.968
Autor:
Tatsuya Usami, K. Kinoshita, K. Shiba, Munehiro Tada, Shinobu Saitoh, Yoshihiro Hayashi, Takamaro Kikkawa, M. Tagami, Masayuki Hiroi, T. Onodera
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 21:256-262
Copper dual-damascene (DD) interconnects are fabricated with low-k organic film (SiLKtrade) without any etch-stop layers by use of dual hard mask (dHM) process combined with sidewall-hardening etching step. It is a key point to reduce shoulder loss d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82787f5ac5fd38150740aeeeee6ccf00
https://doi.org/10.1109/tsm.2008.2000268
https://doi.org/10.1109/tsm.2008.2000268
Autor:
Toru Tatsumi, Masayuki Hiroi
Publikováno v:
Journal of Crystal Growth. 150:1005-1010
We have investigated the epitaxial growth of Si 1 - x - yGe x C y alloys on a Si(100) surface by cold-wall ultrahigh vacuum chemical vapor deposition, using disilane (Si 2 H 6 ), germane (GeH 4 ) and acetylene (C 2 H 2 ). We have studied the growth r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ac57ffc6391c41ef7fe9a15aaadcbba
https://doi.org/10.1016/0022-0248(95)80091-p
https://doi.org/10.1016/0022-0248(95)80091-p
Publikováno v:
Applied Physics Letters. 83:686-688
We previously showed that a Ti layer insertion suppressed the stress-induced void formation in the Cu line under a via without increasing the electric resistance of the line [Ueki et al., Tech. Dig.-Int. Electron Devices Meet. 2002, 749 (2002)]. We d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::514dad0f6f35b80f5d42ba3523fdae3a
https://doi.org/10.1063/1.1596725
https://doi.org/10.1063/1.1596725
Publikováno v:
Physical Review B. 48:17331-17337
A Si epitaxial layer was selectively grown on SiO 2 -patterned Si(100) with no miscut and on 1 o , 3 o , and 4 o miscut vicinal surfaces by ultrahigh-vacuum chemical-vapor deposition using disilane. On the patterned Si(100) surfaces with and without
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94be0e57750a4c44d1b0e57233287586
https://doi.org/10.1103/physrevb.48.17331
https://doi.org/10.1103/physrevb.48.17331
Photoluminescence spectra of Si1-xGex/Si quantum well structures grown by three different techniques
Autor:
Masayuki Hiroi, Nobuyuki Ikarashi, Michio Tajima, Koichi Terashima, Taeko Niino, Toru Tatsumi
Publikováno v:
Journal of Electronic Materials. 21:1081-1085
Photoluminescence (PL) spectra of Si1-xGex/Si multiple quantum wells have been measured at 4.2 K for the samples grown by three different techniques; conventional molecular beam epitaxy (MBE), gas-source MBE, and ultra high vacuum chemical vapor depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8c40c05c807aa6424214a94bf251a68
https://doi.org/10.1007/bf02667597
https://doi.org/10.1007/bf02667597
Publikováno v:
Journal of Crystal Growth. 120:275-278
The conditions under which selective epitaxial growth (SEG) is achieved in UHV-CVD with Si2H6 are determined by the amount of Si2H6 molecules being supplied, and there is a critical gas supply amount (Fc) beyond which SEG will break down and lose its
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eec0929b08b0f20153df8eb1a488ce2
https://doi.org/10.1016/0022-0248(92)90402-5
https://doi.org/10.1016/0022-0248(92)90402-5
Publikováno v:
Journal of Crystal Growth. 111:856-859
In Si 2 H 6 gas source Si-MBE, B doping is achieved using HBO 2 Knudsen cell or B 2 H 6 gas dopant. B doping effect on gas source Si-MBE growth was studied for these two different doping sources. At high B doping using HBO 2 cell, RHEED intensity osc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::37823e91bd35b0c7ba997063b3001a21
https://doi.org/10.1016/0022-0248(91)91096-s
https://doi.org/10.1016/0022-0248(91)91096-s
Autor:
Masayuki Hiroi, Naoya Furutake, Makoto Ueki, T. Onodera, Nobuyuki Ikarashi, Yoshihiro Hayashi, M. Yoshiki
Publikováno v:
Digest. International Electron Devices Meeting.
We verified the effect of Ti layer insertion on stress induced void formation in wide Cu lines where voids were formed under via. In order to improve adhesion property between via and underlying Cu, PVD-Ti was inserted under Ta/TaN barrier. When nomi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91ffd8a27d2761ff5d19562b857d0b2b
https://doi.org/10.1109/iedm.2002.1175946
https://doi.org/10.1109/iedm.2002.1175946
Autor:
Naoya Furutake, Shuichi Saito, Yoshihiro Hayashi, Munehiro Tada, Y. Harada, Hiroto Ohtake, Kenichiro Hijioka, T. Onodera, Masayuki Hiroi, Tsuneo Takeuchi
Publikováno v:
Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).
Hybrid-type, Cu dual damascene interconnects (DDI) are fabricated in a porous organosilica film (k = 2.1) inserted between low-k films of hard-mask (HM) and etch-stop (ES) layers. Plasma-polymerized, divinyl siloxane bis-benzocyclobutene (p-BCB, k =
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6ef697b204017d07b5a138159b1a096
https://doi.org/10.1109/iitc.2002.1014872
https://doi.org/10.1109/iitc.2002.1014872