Zobrazeno 1 - 10
of 41
pro vyhledávání: '"Masayuki Hatano"'
Autor:
Norikazu Takeuchi, Genna Hasegawa, Komukai Toshiaki, Takahiro Iwasaki, Masayuki Hatano, Motofumi Komori, Takuya Kono
Publikováno v:
Novel Patterning Technologies 2023.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0eaf52485d45203b11cb61e25fb4be47
https://doi.org/10.1117/12.2657912
https://doi.org/10.1117/12.2657912
Autor:
Takahiro Iwasaki, Hirokazu Miyoshi, Anupam Mitra, Masayuki Hatano, Kazuya Fukuhara, Motofumi Komori, Takuya Kono, Tetsuro Nakasugi
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5412d1003d4912f420d0c42c2c95f46
https://doi.org/10.1117/1.jmm.21.1.011008
https://doi.org/10.1117/1.jmm.21.1.011008
Autor:
Yong-Taik Kim, Hirokazu Kato, S. Inoue, Motofumi Komori, Hirotaka Tsuda, Kei Kobayashi, A. Mitra, K. Matasunaga, Hiroshi Tokue, Sachiko Kobayashi, Masanobu Saito, Tetsuro Nakasugi, T. Imamura, Wooyung Jung, Takeharu Motokawa, Tatsuhiko Higashiki, T. Komukai, Kazuya Fukuhara, J. Cho, Masamitsu Itoh, Masayuki Hatano, K. Takahata, Shingo Kanamitsu, Takuya Kono, Kohji Hashimoto
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
We developed a nanoimprint lithography (NIL) technology including NIL system, template and resist process for half pitch (hp) 14 nm direct pattering. The latest NIL system NZ2C shows the mix and match overlay (MMO) of 3.4 nm ( $3\sigma$ ) and the tem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8e744f518046f1bb7c5a2041b9f1608
https://doi.org/10.1109/iedm.2018.8614578
https://doi.org/10.1109/iedm.2018.8614578
Autor:
Kei Kobayashi, Masato Suzuki, Wooyung Jung, Eun Hyuk Choi, Tetsuro Nakasugi, Hirokazu Kato, Takuya Kono, Hiroshi Tokue, Kazuya Fukuhara, Masayuki Hatano
Publikováno v:
Novel Patterning Technologies 2018.
A low cost alternative lithographic technology is desired to cope with the challenges in decreasing feature size of semiconductor devices. Nano-imprint lithography (NIL) is one of the viable candidates.[1][2][3] NIL has been a promising solution to o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2cec36e47ee8780fb94cddcc2be3eb5
https://doi.org/10.1117/12.2297294
https://doi.org/10.1117/12.2297294
Autor:
Tetsuro Nakasugi, Nakamura Takayuki, Kei Kobayashi, Eun Hyuk Choi, Takuya Kono, Hirokazu Kato, Hiroshi Tokue, Masayuki Hatano, Wooyung Jung
Publikováno v:
Novel Patterning Technologies 2018.
Nanoimprint lithography (NIL) is a candidate of alternative lithographic technology for memory devices. We are developing NIL technology and challenging critical issues such as defectivity, overlay, and throughput . NIL material is a key factor to su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fac0487e55b9504c9b06855342bc9b8e
https://doi.org/10.1117/12.2297307
https://doi.org/10.1117/12.2297307
Autor:
Eun Hyuk Choi, Kazuya Fukuhara, Hiroshi Tokue, Kei Kobayashi, Masato Suzuki, Wooyung Jung, Takuya Kono, Masafumi Asano, Masayuki Hatano, Tetsuro Nakasugi
Publikováno v:
SPIE Proceedings.
A low cost alternative lithographic technology is desired to meet the decreasing feature size of semiconductor devices. Nano-imprint lithography (NIL) is one of the candidates for alternative lithographic technologies.[1][2][3] NIL has such advantage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c84c209eb013b33574ac7b661bc8cf9
https://doi.org/10.1117/12.2257951
https://doi.org/10.1117/12.2257951
Autor:
Takuya Kono, Masayuki Hatano, Hiroshi Tokue, Hirokazu Kato, Kazuya Fukuhara, Tetsuro Nakasugi
Publikováno v:
Proceedings of SPIE; 1/21/2019, Vol. 10958, p1-7, 7p
Autor:
Hiroshi Tokue, Takuya Kono, Kei Kobayashi, Wooyung Jung, Nakasugi Tetsuro, Eun Hyuk Choi, Hiroyuki Kashiwagi, Masayuki Hatano
Publikováno v:
SPIE Proceedings.
A low cost alternative lithographic technology is desired to meet with the decreasing feature size of semiconductor devices. Nanoimprint lithography (NIL) is one of the candidates for alternative lithographic technologies. NIL has advantages such as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea9753a8a777e229fb83b887141bab31
https://doi.org/10.1117/12.2218972
https://doi.org/10.1117/12.2218972
Autor:
Ji-Young Im, Inanami Ryoichi, Motofumi Komori, Masayuki Hatano, Akiko Mimotogi, Sachiko Kobayashi, Kyoji Yamashita, Takuya Kono, Shimon Maeda
Publikováno v:
SPIE Proceedings.
Technologies for pattern fabrication using Nanoimprint lithography (NIL) process are being developed for various devices. NIL is an attractive and promising candidate for its pattern fidelity toward 1z device fabrication without additional usage of d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c58aa48eb3797320b4dc7d349259f9b5
https://doi.org/10.1117/12.2219052
https://doi.org/10.1117/12.2219052
Autor:
Kei Kobayashi, Takayuki Nakamura, Hirokazu Kato, Masayuki Hatano, Hiroshi Tokue, Tetsuro Nakasugi, Eun Hyuk Choi, Wooyung Jung, Takuya Kono
Publikováno v:
Proceedings of SPIE; 1/12/2018, Vol. 10584, p1-8, 8p