Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Masayuki Harashima"'
Publikováno v:
THE JAPANESE JOURNAL OF EXPERIMENTAL SOCIAL PSYCHOLOGY. 56:14-22
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b6b0a81f099d352ca339db627cd129d
https://doi.org/10.2130/jjesp.1505
https://doi.org/10.2130/jjesp.1505
Publikováno v:
The Proceedings of the Annual Convention of the Japanese Psychological Association. 79:2AM-013
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa5e829ab4f1cd56c8d7913ec79c8368
https://doi.org/10.4992/pacjpa.79.0_2am-013
https://doi.org/10.4992/pacjpa.79.0_2am-013
Autor:
Masayuki Harashima, Takashi Oguchi
Publikováno v:
THE JAPANESE JOURNAL OF EXPERIMENTAL SOCIAL PSYCHOLOGY. 47:69-77
従来，自尊心が高いことは望ましいこととされてきた。しかし自尊心が高いと，課題に失敗したときなどの自我脅威状況において，他者に攻撃的にふるまいやすいことが示されている（B
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55163d1d43b8e04346a79e290d3989d6
https://doi.org/10.2130/jjesp.47.69
https://doi.org/10.2130/jjesp.47.69
Publikováno v:
Applied Surface Science. 252:3460-3465
The initial stage of cubic silicon carbide (3C-SiC) growth on a Si(0 0 1) surface using dimethylsilane (DMS) as a source gas was observed using scanning tunneling microscopy (STM) and reflection high-energy electron diffraction (RHEED). It was found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e36c5bbe9f7a1d75cd839b64425e6eda
https://doi.org/10.1016/j.apsusc.2005.05.021
https://doi.org/10.1016/j.apsusc.2005.05.021
Publikováno v:
Nanotechnology. 15:S406-S409
At the initial stage of 3C-SiC growth on Si(001) using a organosilicon compound such as monomethylsilane (MMS), Si(001)-c(4 × 4) was formed before the nucleation of SiC islands. From observation of the c(4 × 4) structure by scanning tunnelling micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::751cffcfb318ed686d03c5103711c534
https://doi.org/10.1088/0957-4484/15/6/017
https://doi.org/10.1088/0957-4484/15/6/017
Publikováno v:
Applied Surface Science. 216:575-579
The initial stage of cubic silicon carbide (3C–SiC) growth on Si(0 0 1)–2×1 surface was observed using monomethylsilane (MMS) as source gas at 650–750 °C by reflection high-energy electron diffraction (RHEED) and atomic force microscopy (AFM)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b883c2af715fae879ec850f43812955
https://doi.org/10.1016/s0169-4332(03)00441-0
https://doi.org/10.1016/s0169-4332(03)00441-0
Publikováno v:
Hyomen Kagaku. 24:474-479
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c5411a77c31b962863d93095b5fb459
https://doi.org/10.1380/jsssj.24.474
https://doi.org/10.1380/jsssj.24.474
Autor:
Yukio Sano, Masaaki Miyajima, Kenji Fukuda, Katsunori Asano, Tsuyoshi Araoka, M. Yoshikawa, Katsumi Tatera, Hiroshi Kimura, Manabu Arai, Toshihiko Hayashi, Yasunori Tanaka, Dai Okamoto, Masayuki Harashima, Hajime Okumura, Naoki Kumagai, Mitsuo Okamoto, Tetsuo Hatakeyama, Tsunenobu Kimoto, Shinichiro Matsunaga, Yoshiyuki Yonezawa, Takashi Tsutsumi, Eisuke Morisaki, Manabu Takei, Akihiro Otsuki, Shinsuke Harada, Naoyuki Oose, Tomohisa Kato, Tomonori Mizushima, Youichi Makifuchi, Kensuke Takenaka, Hiroyuki Fujisawa, Mitsuru Sometani, Atsushi Tanaka, S. Ogata, Tadayoshi Deguchi, Koji Nakayama
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
4H-SiC carbon face flip-type n-channel implantation and epitaxial (IE)-IGBT with an epitaxial p ++ substrate was developed and its switching test was carried out. We were able to achieve an ultrahigh blocking voltage greater than 16 kV, extremely low
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06e4054c3110da6ceb6f43fa2be5e9f9
https://doi.org/10.1109/ispsd.2014.6856030
https://doi.org/10.1109/ispsd.2014.6856030
Autor:
M. Yoshikawa, Masaaki Miyajima, Naoki Kumagai, Dai Okamoto, Mitsuo Okamoto, Kensuke Takenaka, Kenji Fukuda, Masayuki Harashima, Takashi Tsutsumi, Eisuke Morisaki, Hiroyuki Fujisawa, Manabu Takei, Shinsuke Harada, Hajime Okumura, Mitsuru Sometani, Tomonori Mizushima, Naoyuki Oose, Yukio Sano, Youichi Makifuchi, Shinichiro Matsunaga, Tetsuo Hatakeyama, Yoshiyuki Yonezawa, Tadayoshi Deguchi, Tsunenobu Kimoto, Akihiro Otsuki, Katsumi Tatera, Yasunori Tanaka, Tsuyoshi Araoka, Hiroshi Kimura, Tomohisa Kato, Manabu Arai
Publikováno v:
2013 IEEE International Electron Devices Meeting.
Flip-type n-channel implantation and epitaxial (IE)-IGBT on 4H-SiC carbon face with an epitaxial p++ collector layer was investigated. In this study, we employed the IEMOSFET as a MOSFET structure with original wet gate oxidation method, to realize h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c48a04baac34facf165519f1b094f65d
https://doi.org/10.1109/iedm.2013.6724576
https://doi.org/10.1109/iedm.2013.6724576
Publikováno v:
Japanese Journal of Applied Physics. 44:1915
Using the temperature programmed desorption (TPD) method and a scanning tunneling microscope (STM), the correspondence between carbon incorporation into a Si(001) substrate and the development of a c(4×4) area on a surface has been investigated. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4ead8a6a457d3835dcc5e63066021b5
https://doi.org/10.1143/jjap.44.1915
https://doi.org/10.1143/jjap.44.1915