Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Masayuki Furuhashi"'
Autor:
Masayuki Furuhashi, Masazumi Fujiwara, Takahito Ohshiro, Makusu Tsutsui, Kazuki Matsubara, Masateru Taniguchi, Shigeki Takeuchi, Tomoji Kawai
Publikováno v:
AIP Advances, Vol 1, Iss 3, Pp 032102-032102-5 (2011)
An optical channel waveguide is a key solution to overcome signal propagation delay. For the benefits of miniaturization, development of microfabrication process for waveguides is demanded. TiO2 is one of the suitable candidates for the microfabricat
Externí odkaz:
https://doaj.org/article/dcc9661651054a5fafc0a5be4c04f25b
Autor:
Masayuki Furuhashi, Satoshi Yamakawa, Kazuo Tsutsui, Hiroshi Iwai, Hitoshi Wakabayashi, Yiming Lei, Shingo Tomohisa, Kuniyuki Kakushima
Publikováno v:
Microelectronics Reliability. 84:226-229
Electrical characteristics of SiC metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited SiO2 (ALD-SiO2) gate dielectrics were investigated. Post-metallization annealing (PMA) with W gate electrodes at 950 °C showed a large recovery
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9638aa8a4a9f4e93b1ddee55b6b7511a
https://doi.org/10.1016/j.microrel.2018.03.036
https://doi.org/10.1016/j.microrel.2018.03.036
Autor:
Kazuo Tsutsui, Kuniyuki Kakushima, Hiroshi Iwai, Yiming Lei, Satoshi Yamakawa, Hitoshi Wakabayashi, Shingo Tomohisa, Masayuki Furuhashi
Publikováno v:
Microelectronics Reliability. 84:248-252
The effect of La-silicate interface layer (IL) on the electrical characteristics of 4H-SiC metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited SiO2 (ALD-SiO2) gate dielectrics was investigated. In addition to a slight reduction in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d2fcbbd7e7c4f7095d29d14cae47181
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100813954
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100813954
Publikováno v:
Materials Science Forum. 858:829-832
High threshold voltage low loss 600 V 4H-SiC MOSFETs have been fabricated successfully using a re-oxidation technique for gate oxides and an n-type doping in the Junction Field Effect Transistor region of the MOSFET with shrunk MOS cells. The MOSFET
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41c5444d1470f04dc8742c4303714c48
https://doi.org/10.4028/www.scientific.net/msf.858.829
https://doi.org/10.4028/www.scientific.net/msf.858.829
Publikováno v:
Materials Science Forum. :985-988
We found that threshold voltage (Vth) of a 4H-SiC MOSFET increases drastically by performing low temperature wet oxidation after nitridation in a gate oxide process. The increment of Vth depends on the wet oxidation conditions. Wet oxidation increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0479bc128253644f55f09450ae52157e
https://doi.org/10.4028/www.scientific.net/msf.778-780.985
https://doi.org/10.4028/www.scientific.net/msf.778-780.985
Autor:
Masateru Taniguchi, Masayuki Furuhashi, Makusu Tsutsui, Tomoji Kawai, Takahito Ohshiro, Kazuki Matsubara
Publikováno v:
Journal of the American Chemical Society. 133:9124-9128
We report label-free electrical detections of chemically modified nucleobases in a DNA using a nucleotide-sized electrode gap. We found that methyl substitution contributes to increase the tunneling conductance of deoxycytidines, which was attributed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::656a83d4cf4d4e538ce2647bbb635408
https://doi.org/10.1021/ja203839e
https://doi.org/10.1021/ja203839e
Autor:
Masayuki Furuhashi, Jun Yoshinobu
Publikováno v:
The Journal of Physical Chemistry Letters. 1:1655-1659
We investigated the chemical state and molecular orientation of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) adsorbed on a hydrogen-terminated Si(111) (1 × 1) surface using transmission infrared (IR) spectroscopy. We deposited F4-T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d12c6c8d85f12c4cabf1ae64335867e
https://doi.org/10.1021/jz100463q
https://doi.org/10.1021/jz100463q
Autor:
Shuhei Nakata, Munetaka Noguchi, Tadashi Nishimura, Masayuki Furuhashi, Hasegawa Junichi, Takayuki Iwasaki, Tetsuo Kodera, Mutsuko Hatano
Publikováno v:
Jpn. J. Appl. Phys.. 54
In this study, we investigate the influence of wet oxidation after nitridation of a gate oxide on the interface states in SiC metal–oxide–semiconductor field-effect transistors (MOSFETs). We used deep-level transient spectroscopy (DLTS) to clarif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::683c9159ecd3d510569e64b9cab587b0
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100683458
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100683458
Publikováno v:
The European Physical Journal Applied Physics. 27:163-166
The stability of B atom near the Si(100)/SiO 2 interface during annealing is studied by using ab initio calculation to investigate the atomic scale mechanism of B segregation at the Si(100)/SiO 2 interface. Contrary to the experimental observations s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::54d62b2b2a93a7dd53400459559779f8
https://doi.org/10.1051/epjap:2004136
https://doi.org/10.1051/epjap:2004136
Publikováno v:
IEICE Electronics Express. 1:126-130
The thermo dynamical stability of a boron atom at the Si/SiO2 interface was studied by using ab initio calculation to investigate a mechanism of boron pile-up at the interface during thermal annealing. The B atom is stable in bulk Si site of the inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87005f77b8c2dbd9afa6ef18f94190cf
https://doi.org/10.1587/elex.1.126
https://doi.org/10.1587/elex.1.126