Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Masayoshi Kosaki"'
Autor:
Tetsuo Narita, Masakazu Kanechika, Jun Kojima, Hiroki Watanabe, Takeshi Kondo, Tsutomu Uesugi, Satoshi Yamaguchi, Yasuji Kimoto, Kazuyoshi Tomita, Yoshitaka Nagasato, Satoshi Ikeda, Masayoshi Kosaki, Tohru Oka, Jun Suda
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-7 (2022)
Abstract Power devices are operated under harsh conditions, such as high currents and voltages, and so degradation of these devices is an important issue. Our group previously found significant increases in reverse leakage current after applying cont
Externí odkaz:
https://doaj.org/article/acd315b0a2484a1184040bcb796b20b0
Autor:
Tetsuo Narita, Masakazu Kanechika, Kazuyoshi Tomita, Yoshitaka Nagasato, Takeshi Kondo, Tsutomu Uesugi, Satoshi Ikeda, Masayoshi Kosaki, Tohru Oka, Jun Suda
Publikováno v:
Applied Physics Letters. 122:113505
This work examined the intentional generation of recombination centers in GaN p– n junctions on freestanding GaN substrates. Irradiation with a 4.2 MeV proton beam was used to create a uniform distribution of vacancies and interstitials across GaN
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bf5f432fa0adbf0dc86593fc23e7d07
https://doi.org/10.1063/5.0141781
https://doi.org/10.1063/5.0141781
Autor:
Masayoshi Kosaki, Yasuji Kimoto, Masakazu Kanechika, Kazuyoshi Tomita, Takeshi Kondo, Jun Kojima, Satoshi Ikeda, Yoshitaka Nagasato, Tetsuo Narita, Tsutomu Uesugi, Tohru Oka, Satoshi Yamaguchi, Jun Suda
Publikováno v:
Applied Physics Letters. 118:253501
Reliability tests involving the application of high electrical stresses were employed to assess GaN-based vertical p-n junctions fabricated on freestanding GaN substrates with threading dislocation densities less than 104 cm−2. Electric field crowd
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6099b53cd47071d7da925e105a46c0e4
https://doi.org/10.1063/5.0053139
https://doi.org/10.1063/5.0053139
Autor:
Mitsuaki Shimizu, Hiroyuki Sazawa, Akimasa Kinoshita, Naoki Shibata, Yasuhito Tanaka, Hajime Okumura, K. Furuta, Shuichi Yagi, Koji Hirata, Masayoshi Kosaki
Publikováno v:
physica status solidi c. 4:2748-2751
Metal-insulator-semiconductor (MIS) heterostructure field-effect transistors (HFETs) fabricated with HfAlO as a gate insulator with high dielectric permittivity are demonstrated to achieve true enhancement-mode operation with no gate leakage and high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ec6217fdbedcc0b12d2b6d3dd7d91fd
https://doi.org/10.1002/pssc.200674920
https://doi.org/10.1002/pssc.200674920
Autor:
Masayoshi Kosaki, K. Furuta, Hajime Okumura, Hiroyuki Sazawa, Shin-ichi Nakashima, Koji Hirata, H. Bang, T. Tsuchiya, K. Hikosaka, Takeshi Mitani
Publikováno v:
physica status solidi c. 3:2321-2324
To clarify the effect of micropipes in SiC substrates on AlGaN/GaN HEMT performance, we fabricated HEMTs, with precise positioning, on and around hollow core at the end of micropipes in the SiC substrate with an overgrown AlGaN/GaN epitaxial layer an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe3369537ff5dcc45a63bc997a27a0e3
https://doi.org/10.1002/pssc.200565459
https://doi.org/10.1002/pssc.200565459
Autor:
Naoki Shibata, Masanobu Senda, Yuji Ando, Masaaki Kuzuhara, Hironobu Miyamoto, Yasuhiro Okamoto, Masayoshi Kosaki, Tatsuo Nakayama, Koji Hirata, K. Hataya, Takashi Inoue
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 52:2536-2540
A recessed-gate AlGaN-GaN field-modulating plate (FP) field-effect transistor (FET) was successfully fabricated on an SiC substrate. By employing a recessed-gate structure on an FP FET, the transconductance was increased from 150 to 270 mS/mm, leadin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0707f018b801ad7ea460439e5a7c7d2b
https://doi.org/10.1109/tmtt.2004.837159
https://doi.org/10.1109/tmtt.2004.837159
Autor:
Masayoshi Kosaki, Shugo Nitta, Y. Iwamura, Shigeo Yamaguchi, S. Kamiyama, Yasuhiro Watanabe, Hiroshi Amano, Yohei Yukawa, Isamu Akasaki
Publikováno v:
Journal of Crystal Growth. 248:503-506
P-GaN layer was grown by metalorganic vapor phase epitaxy at 1000°C with an LT-deposited AIN buffer layer. Bis(cyclopentadienyl) magnesium was used as a dopant and trimethyindium (TMIn) was simultaneously supplied. N 2 carrier gas was used during Ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e29ca438bbe487004578cb1ba5bfc23
https://doi.org/10.1016/s0022-0248(02)01841-9
https://doi.org/10.1016/s0022-0248(02)01841-9
Autor:
Yasuhiro Watanabe, Shigeo Yamaguchi, Shugo Nitta, Hiroshi Amano, Isamu Akasaki, Yohei Yukawa, Motoaki Iwaya, Masayoshi Kosaki
Publikováno v:
Materials Science and Engineering: B. 93:139-142
We found that the mass transport of GaN occurs at around 1100 °C under NH 3 -containing atmosphere if a trench is artificially formed, while that of Al 0.1 Ga 0.9 N does not. This different behavior of these two materials was utilized in the fabrica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ae651c39b969b20b9b7ccc4150c8183
https://doi.org/10.1016/s0921-5107(02)00021-1
https://doi.org/10.1016/s0921-5107(02)00021-1
Autor:
Yohei Yukawa, Masayoshi Kosaki, Shigeo Yamaguchi, Shugo Nitta, Shingo Mochizuki, Yasuhiro Watanabe, Isamu Akasaki, Tetsuya Nakamura, Hiroshi Amano
Publikováno v:
physica status solidi (a). 188:895-898
Al 0.90 In 0.10 N/GaN, AIN/GaN and their superlattices (SLs) grown on GaN by metalorganic vapor phase epitaxy (MOVPE) were studied. A (0001) sapphire substrate was used. X-ray diffraction analysis of 2θ/ω scans and reciprocal space mapping showed t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::500272c8f97274ce88832ebbd0012ba5
https://doi.org/10.1002/1521-396x(200112)188:2<895::aid-pssa895>3.0.co
https://doi.org/10.1002/1521-396x(200112)188:2<895::aid-pssa895>3.0.co
Autor:
Shigeo Yamaguchi, Shugo Nitta, Masayoshi Kosaki, Michihiko Kariya, Isamu Akasaki, Yohei Yukawa, Hiroshi Amano
Publikováno v:
Journal of Applied Physics. 89:7820-7824
We study the effect of a combination of N2 and H2 carrier gases on the residual strain and crystalline properties of GaN, and we propose its application to the improvement of crystalline quality of GaN/Al0.17Ga0.83N multiple quantum well (MQW) struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::243dd9aa9147cf3e5699743516d75282
https://doi.org/10.1063/1.1371278
https://doi.org/10.1063/1.1371278