Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Masayoshi Iwayama"'
Autor:
Takeshi Kajiyama, Yoshiaki Asao, Ryousuke Takizawa, Makoto Nagamine, Masayoshi Iwayama, Shigeki Takahashi, Minoru Amano, Toshihiko Nagase, Tatsuya Kishi, Keiji Hosotani, Masahisa Yoshikawa, K. Itagaki, Eiji Kitagawa, Yuui Shimizu, Hisanori Aikawa, K. Tsuchida, T. Ueda, Masahiko Nakayama, Yoshihisa Iwata, Tadashi Kai, Sumio Ikegawa, Hiroaki Yoda, T. Inaba, Katsuya Nishiyama, Naoharu Shimomura, Yuji Ueda
Publikováno v:
IEEE Transactions on Magnetics. 42:2724-2726
Technologies for realizing high density MRAM were developed. First, new circuitry to lower the resistance of programming wires was developed. Second, both MTJ plane shape and cross-sectional structure were optimized to lower the programming current.
Autor:
Katsuyuki Fujita, Yohji Watanabe, Yoshihiro Ueda, Tadashi Kai, Kuniaki Sugiura, Takafumi Shimizu, Masayoshi Iwayama, Yoshiaki Asao, Minoru Amano, Sumio Ikegawa, Hiroaki Yoda, Tatsuya Kishi, Tsuneo Inaba, Takeshi Kajiyama, Naoharu Shimomura, Kenji Tsuchida
Publikováno v:
ISSCC
In order to realize a sub-Giga bit scale NVRAM, the novel MRAM based on the spin-transfer-torque (STT) switching has been intensively investigated due to its excellent scalability compared with a conventional magnetic field induce switching MRAM [1].
Autor:
Yoshiaki Asao, Masayoshi Iwayama, Sumio Ikegawa, Hiroaki Yoda, Akihiro Nitayama, K. Tsuchida, Tatsuya Kishi, Hisanori Aikawa
Publikováno v:
DFT
A comprehensive statistical model of the switching probability was proposed for a 1 Gb spin transfer torque magneto resistive random access memory (STT-MRAM). Since the switching current varies with every write cycle owing to the thermal instability,
Autor:
Yoshiaki Asao, Norikazu Ohshima, Masahisa Yoshikawa, Hisanori Aikawa, Shuichi Tahara, T. Ueda, Keiji Hosotani, Takeshi Kajiyama, S. Miura, Tatsuya Kishi, K. Tsuchida, Sumio Ikegawa, Naoharu Shimomura, Hiroaki Yoda, Hiromitsu Hada, Masayoshi Iwayama, Minoru Amano, Akihiro Nitayama
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Autor:
Shigeki Takahashi, Naoharu Shimomura, Masayoshi Iwayama, Minoru Amano, Yoshiaki Asao, Sumio Ikegawa, Takeshi Kajiyama, Hiroaki Yoda, Tatsuya Kishi, Akihiro Nitayama, Kuniaki Sugiura
Publikováno v:
Japanese Journal of Applied Physics. 48:08HD02
A spin transfer torque magnetoresistive random access memory (STT-MRAM) is the most promising candidate for a non-volatile random access memory, because of its scalability, high-speed operation, and unlimited read/write endurance. An ion beam etching
Autor:
Takeshi Kajiyama, Masayoshi Iwayama, Yoshiaki Asao, Masahiko Nakayama, Hisanori Aikawa, Akihiro Nitayama, Tadashi Kai, Sumio Ikegawa, Hiroaki Yoda
Publikováno v:
Journal of Applied Physics. 103:07A720
In this paper, the switching current distribution by spin transfer torque is investigated for CoFeB∕MgO∕CoFeB magnetic tunnel junctions (MTJs). The distribution of the spin transfer switching current for a MTJ with junction size of 85×110nm2 is