Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Masaya Uematsu"'
Autor:
Ikuhiro Yamamura, Satoshi Yamaguchi, Yoshihiro Takao, Hiroshi Kudo, Naoki Nagashima, Michiari Kawano, Yoshiyuki Kotani, Satoru Asai, Nobuhisa Naori, Keizaburo Yoshie, Takashi Nagano, Masaya Uematsu, Kazuo Sukegawa, Shingo Kadomura, Junichi Mitani
Publikováno v:
Microelectronics Reliability. 42:15-25
This paper describes a 0.11 μm CMOS technology with high-reliable copper (Cu) and very low k (VLK) (k
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a581a0e42dbd8d548babb7f774476ce
https://doi.org/10.1016/s0026-2714(01)00233-5
https://doi.org/10.1016/s0026-2714(01)00233-5
Autor:
Keisuke Nakazawa, Takahiro Matsuo, Masaya Uematsu, Tohru Ogawa, Junji Miyazaki, Toshio Onodera
Publikováno v:
SPIE Proceedings.
It was demonstrated that the DOF obtained using the Att-PSM was 0.5 micrometer for 150 nm hole pattern, whereas that obtained using a binary mask was 0.2 micrometer. Durability of the film subjected to ArF laser irradiation is also investigated, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4a3973251112f718abd1055eb2a29b0
https://doi.org/10.1117/12.360213
https://doi.org/10.1117/12.360213
Publikováno v:
SPIE Proceedings.
Pellicle durability and the effect of damaged pellicles on lithographic performance were investigated. It was found that pellicles lose their thickness but do not change their optical constant in an air atmosphere when irradiated by an ArF laser. Cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b23ad7d586e83a9622d8a2d09e841603
https://doi.org/10.1117/12.354364
https://doi.org/10.1117/12.354364
Autor:
Tohoru Ogawa, Keisuke Nakazawa, Takeshi Ohfuji, Hiroshi Ohtsuka, Makoto Takahashi, Shinji Kishimura, Masaya Uematsu, Masaru Sasago
Publikováno v:
SPIE Proceedings.
In ArF excimer laser lithography, the bottom antireflective coating (BARC) technique is essential in inhibiting the effect of interference and reflective notching. We investigated the antireflective effect of commercially available organic BARCs, tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0e7fa18ea56e84c9e2ffcd57e37eb4b
https://doi.org/10.1117/12.310760
https://doi.org/10.1117/12.310760
Publikováno v:
SPIE Proceedings.
A new technique, which combines weak quadrupole illumination and an attenuated phase- shifting mask, has been developed. 0.03 micrometers lithography with i-line can be performed with this technique. It is also confirmed that KrF excimer laser lithog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50d52bc9538eb88b6cdc3593788b85f2
https://doi.org/10.1117/12.240934
https://doi.org/10.1117/12.240934
Publikováno v:
SPIE Proceedings.
Practical resolution, which is defined as the minimum geometry for a 1.0 micrometers depth of focus, in conventional krypton fluoride (KrF) excimer laser (248 nm) lithography is 0.30 micrometers . A new illumination technique, which uses a weak quadr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1beb4cc173fa9e323dc12e64906567fb
https://doi.org/10.1117/12.209302
https://doi.org/10.1117/12.209302
Publikováno v:
SPIE Proceedings.
A new exposure method for the depth of focus enhancements without using the off axis filter has been developed. It makes KrF excimer laser (248 nm) lithography to a robust mass production tool beyond 2nd generation of 64 MDRAM class devices. With thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bac87fb612f8441ddd3331f4cc3e3ad
https://doi.org/10.1117/12.175425
https://doi.org/10.1117/12.175425
Autor:
Shigeyasu Mori, Kazuya Kamon, Masaya Uematsu, Takeshi Ohfuji, Keisuke Nakazawa, Tohru Ogawa, Makoto Takahashi, Hiroshi Ohtsuka, Masaru Sasago, Toshio Onodera
Publikováno v:
Japanese Journal of Applied Physics. 36:7488
We demonstrate applications of alternating phase shift mask (Alt-PSM) techniques to ArF excimer laser lithography with a numerical aperture of 0.6 and a coherence factor of 0.3. A 0.10 µm line-&-space (L/S) pattern was fabricated using a single-laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a3a9811b2ddc485c7fc8574b0dfd27d
https://doi.org/10.1143/jjap.36.7488
https://doi.org/10.1143/jjap.36.7488
Autor:
Tohru Ogawa, Hiroshi Ohtsuka, Makoto Takahashi, Takeshi Ohfuji, Keisuke Nakazawa, Masaya Uematsu, Toshio Onodera, Masaru Sasago
Publikováno v:
Japanese Journal of Applied Physics. 36:7482
This paper presents the formation results of 0.13-µ m device patterns using argon fluoride (ArF) excimer laser lithography that does not incorporate strong resolution enhancement techniques such as levenson type phase-shifting mask or quadrupole ill
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f8714b1ebe3ff72adb96be5979947a9
https://doi.org/10.1143/jjap.36.7482
https://doi.org/10.1143/jjap.36.7482
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 15:1825
This article presents the extension of krypton fluoride (KrF) excimer laser lithography. An 0.18 μm device can be fabricated by KrF excimer laser lithography when weak off-axis illumination is combined with an attenuated phase-shifting mask, a high-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91807e5a3f6a16b2d9cb71b1986a0eac
https://doi.org/10.1116/1.589532
https://doi.org/10.1116/1.589532