Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Masatsugu ICHIKAWA"'
Autor:
Masatsugu Ichikawa, Harunobu Sagawa, Dai Wakamatsu, I. Nii, Masahiko Sano, Y. Nishioka, S. Bando, Takashi Mukai, S. Shichijo
Publikováno v:
2021 7th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
The luminous flux and temperature characteristics of InGaN-based white light-emitting diodes (LEDs) intended for automotive headlamps were greatly enhanced by bonding a yellow phosphor to the LED chip using surface activated bonding. The performance
Autor:
Hisashi Kino, Hiroki Hanaoka, Takafumi Fukushima, Masatsugu Ichikawa, Tomo Odashima, Yuki Susumago, Tetsu Tanaka
Publikováno v:
2021 IEEE 71st Electronic Components and Technology Conference (ECTC).
This paper deals with a flexible 3D-IC system fabrication methodology. Mini-LEDs and 3D-IC chiplets divided from a large 3D-IC with Cu-TSVs are embedded in an elastomer PDMS based on die-first FOWLP for heterogeneously integrating them into Smart Ski
Autor:
Masatsugu Ichikawa, Shinya Endo, Takao Kosugi, Akira Fujioka, Takehito Shimatsu, Harunobu Sagawa, Miyuki Uomoto, Takashi Mukai
Publikováno v:
ECS Transactions. 75:53-65
AlGaN-based light-emitting diodes (LEDs) are attractive candidates for next-generation light sources in the deep ultraviolet (DUV) region because they can cover the spectral range of 210 – 365 nm through control of the Al content in the epitaxial l
Autor:
N. Eboshi, Takashi Mukai, Masahiko Sano, Masatsugu Ichikawa, Takehito Shimatsu, Miyuki Uomoto, T. Kemmochi
Publikováno v:
2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D).
Enhancement of light transmittance was examined for sapphire or synthetic quartz glass wafers bonded with thin Al films using atomic diffusion bonding (ADB). The results indicate that the thin Al film at the bonded interface diffuses into the wafer b
Publikováno v:
ECS Journal of Solid State Science and Technology. 9:015004
Publikováno v:
Jioshinsetikkusu Rombunshu (Geosynthetics Engineering Journal). 22:55-62
Improvement of Luminous Efficiency in White Light Emitting Diodes by Reducing a Forward-bias Voltage
Autor:
Masahiko Sano, Takao Yamada, Shunsuke Minato, Takashi Mukai, Masatsugu Ichikawa, Takahiko Sakamoto, Yukio Narukawa
Publikováno v:
Japanese Journal of Applied Physics. 46:L963-L965
We fabricated three types of high luminous efficiency white light emitting diodes (LEDs). The first is the white LED, which had a high luminous efficiency (ηL) of 161 lm/W with the high luminous flux (v) of 9.89 lm at a forward-bias current of 20 mA
Autor:
Shinya Endo, Hiroto Tamaki, Takehito Shimatsu, Takao Kosugi, Harunobu Sagawa, Akira Fujioka, Takashi Mukai, Miyuki Uomoto, Masatsugu Ichikawa
Publikováno v:
Applied Physics Express. 9:072101
We fabricated high-output-power 255 and 280 nm light-emitting diodes (LEDs) using direct bonding. The LED chips were bonded to sapphire lenses at room temperature using either atomic diffusion bonding or surface-activated bonding. The LEDs with lense
Autor:
Masatsugu Ichikawa, Akira Fujioka, Takao Kosugi, Shinya Endo, Harunobu Sagawa, Hiroto Tamaki, Takashi Mukai, Miyuki Uomoto, Takehito Shimatsu
Publikováno v:
Applied Physics Express; Jul2016, Vol. 9 Issue 7, p1-1, 1p
Publikováno v:
Journal of Physics D: Applied Physics; Sep2010, Vol. 43 Issue 35, p354002-354002, 1p