Zobrazeno 1 - 1
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pro vyhledávání: '"Masatoshi Inada"'
Autor:
Hayato Miyagawa, Kohei Arimoto, Masahiro Shiraga, Shunsuke Nakanishi, Toshimitsu Mochizuki, Masatoshi Inada, Hidefumi Akiyama, Naoshi Takahashi, Shyun Koshiba, Noriaki Tsurumachi, Toshio Takahashi, Shunsuke Yanai, Kenta Ishii, Natsumi Ohta, Yuko Nakai
Publikováno v:
Journal of Crystal Growth. 378:150-153
We have investigated the electrical and optical properties of p–i–n junction structures in which un-doped GaNAs/GaAs multiple quantum wells (MQWs) were sandwiched by p- and n-doped GaAs layers. The samples were formed on the GaAs (001) substrates
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59005bde375dcd8e9b662dd8b97f6349
https://doi.org/10.1016/j.jcrysgro.2013.01.034
https://doi.org/10.1016/j.jcrysgro.2013.01.034
