Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Masatoshi Aketa"'
Autor:
Seigo Mori, Masatoshi Aketa, Takui Sakaguchi, Hirokazu Asahara, Takashi Nakamura, Tsunenobu Kimoto
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 449-453 (2018)
Low on-resistance 4H-SiC reverse-blocking (RB) metal-oxide-semiconductor field-effect transistors (MOSFETs) have been developed by adopting a non-punch-through (NPT) drift layer in order to suppress the punch-through (PT) current under the reverse-bl
Externí odkaz:
https://doaj.org/article/997eda37d445452c9a8dcd863a5d3c69
Autor:
Takashi Nakamura, Yuichiro Nanen, Takui Sakaguchi, Seigo Mori, Masatoshi Aketa, Tsunenobu Kimoto, Hirokazu Asahara
Publikováno v:
IEEE Transactions on Electron Devices. 64:4167-4174
Novel 3-kV 4H-SiC reverse blocking (RB) metal–oxide–semiconductor field-effect transistors (MOSFETs) have been demonstrated for high-voltage bidirectional switching applications. To achieve RB capability, a series Schottky barrier diode structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c614e1734ca48a3557a306d6513b2250
https://doi.org/10.1109/ted.2017.2732065
https://doi.org/10.1109/ted.2017.2732065
Publikováno v:
2019 IEEE International Conference on Electron Devices and Solid-State Circuits (EDSSC).
A new era in power electronics has been just opened by commercial introduction of silicon carbide (SiC) MOSFETs in a variety of power electronic systems such as power supplies, renewable energy, transportation, heating, robotics, and electric utility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6a371bda57e14f8a5ca7c1ab9fc6040
https://doi.org/10.1109/edssc.2019.8754464
https://doi.org/10.1109/edssc.2019.8754464
Autor:
Takayoshi Shimura, Atthawut Chanthaphan, Masatoshi Aketa, Yuta Fukushima, Hirokazu Asahara, Takashi Nakamura, Heiji Watanabe, Kenji Yamamoto, Takuji Hosoi
Publikováno v:
Materials Science Forum. 858:445-448
The radiative defect centers in thermally-grown SiO2/4H-SiC structures with high-temperature post-oxidation annealing (POA) in various ambient gas, i.e. Ar, H2, and NOx, were examined using cathodoluminescence (CL) measurement. It was found that radi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a15b132b898236ce899d236fc8b44a7a
https://doi.org/10.4028/www.scientific.net/msf.858.445
https://doi.org/10.4028/www.scientific.net/msf.858.445
Publikováno v:
Materials Science Forum. 858:885-888
Dynamic and static characteristics of SiC power MOSFETs at high temperature up to 380°C were investigated. Investigated devices have exhibited a behavior as a normally-off MOSFET even at such high temperature as 380°C. Temperature dependence of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db5e396eed8d4a53aaf6b089d8584b57
https://doi.org/10.4028/www.scientific.net/msf.858.885
https://doi.org/10.4028/www.scientific.net/msf.858.885
Autor:
Hirokazu Asahara, Takayoshi Shimura, Shuji Azumo, Takuji Hosoi, Tsunenobu Kimoto, Kenji Yamamoto, Takashi Nakamura, Heiji Watanabe, Shigetoshi Hosaka, Masatoshi Aketa, Yusaku Kashiwagi
Publikováno v:
Japanese Journal of Applied Physics. 59:021001
Aluminum-based high-permittivity (high-k) gate dielectrics and suitable metal electrodes were systematically designed for advanced SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs). Although electron injection into alumina (Al2O3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5b35a39e417d63b7cb19801d7020bf
https://doi.org/10.7567/1347-4065/ab65a3
https://doi.org/10.7567/1347-4065/ab65a3
Publikováno v:
2017 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
SiC devices are expected to operate at much higher temperature than Si devices. However, commercially available SiC devices are limited to the temperature almost same as Si devices. In order to operate SiC devices at high temperature, it is necessary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1d7a6859d5c34348dac904b8101a3b4
https://doi.org/10.1109/imfedk.2017.7998057
https://doi.org/10.1109/imfedk.2017.7998057
Autor:
Kenji Yamamoto, Tsunenobu Kimoto, Yusaku Kashiwagi, Shigetoshi Hosaka, Takayoshi Shimura, Takuji Hosoi, Masatoshi Aketa, Hirokazu Asahara, Shuji Azumo, Takashi Nakamura, Heiji Watanabe
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
Advanced metal/high-k gate stack technology for SiC-based power MOSFET was demonstrated. We found that the Hf incorporation into aluminum oxynitride (HfAlON gate insulator) combined with TIN electrode effectively improves the stability of threshold v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b46769a80212e0c5c5cb2bc34b2a2344
https://doi.org/10.23919/ispsd.2017.7988906
https://doi.org/10.23919/ispsd.2017.7988906
Autor:
Hirotaka Otake, Toshio Hanada, Takukazu Otsuka, Masatoshi Aketa, Yuki Nakano, Takashi Nakamura
Publikováno v:
ECS Transactions. 50:39-44
SiC devices have the potential to reduce energy losses in high power applications. However SiC devices have yet to achieve ideal performance levels. This paper presents SiC diodes and MOSFETs with advanced trench structures. These devices succeeded i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04cb303cfeb8329da744328408e5dfb9
https://doi.org/10.1149/05003.0039ecst
https://doi.org/10.1149/05003.0039ecst
Publikováno v:
2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
Junction temperature of SiC DMOSFETs at device failure in unclamped inductive switching test has been estimated to be 960 K, and mechanism of the avalanche failure was discussed. The junction temperature was estimated from the extrapolation of temper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90877e5061f71c1a4b9207a6d362af99
https://doi.org/10.1109/imfedk.2016.7521700
https://doi.org/10.1109/imfedk.2016.7521700