Výsledky vyhledávání - "Masatomo Honjo"

Effect of flux composition ratio on the coalescence growth of GaN crystals by the Na-flux method

Autor: Hiroki Imabayashi, Mihoko Maruyama, Masayuki Imanishi, Masatomo Honjo, Kosuke Murakami, Mamoru Imade, Masashi Yoshimura, Kosuke Nakamura, Daisuke Matsuo, Yusuke Mori

Publikováno v: Optical Materials. 65:38-41

Previously, we demonstrated that the Na-flux coalescence growth technique had high potential for the fabrication of large-diameter, high-quality GaN crystals. This present study investigates the relation between the flux composition (Ga/Na) and void

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::939de83eb3f35c66fcccd358ea6b187f
https://doi.org/10.1016/j.optmat.2016.09.017

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Effects of Al additives on growth of GaN polycrystals by the Na flux method

Autor: Hiroki Imabayashi, Mihoko Maruyama, Mamoru Imade, Masayuki Imanishi, Masatomo Honjo, Masashi Yoshimura, Kosuke Murakami, Daisuke Matsuo, Yusuke Mori

Publikováno v: Optical Materials. 65:42-45

In this study, we investigated the growth of GaN polycrystals using the Al-added Na flux method. We studied the effects of Al on accelerating the nucleation and purity of GaN polycrystals. The yields of GaN crystals grown in Al-added Na flux were dra

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0922718b41d62519bbb6a16404035154
https://doi.org/10.1016/j.optmat.2016.09.030

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The effects of surface treatments of the substrates on high-quality GaN crystal growth

Autor: Mihoko Maruyama, Daisuke Matsuo, Mamoru Imade, Masatomo Honjo, Masashi Yoshimura, Yuma Todoroki, Yusuke Mori, Hiroki Imabayashi, Kosuke Murakami, Taku Fujimori, Hideo Takazawa

Publikováno v: Journal of Crystal Growth. 372:73-77

To study the effects of the surface treatments of c -plane GaN substrates on epitaxial growth, surfaces of c -plane GaN freestanding substrates grown by the Na flux method were treated in different ways: mechanical polishing (MP); chemical mechanical

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::cb9ce6705f13bc2ee01f819a3b6d85ff
https://doi.org/10.1016/j.jcrysgro.2013.03.005

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Effect of nitrogen doping on the properties of AlSiO film for wide bandgap semiconductors

Autor: Masatomo Honjo, Hirotaka Tanaka, Keiko Masumoto, Yukihiko Okumura, Chiharu Kimura, Hidemitsu Aoki, Naoyoshi Komatsu, Takashi Sugino

Publikováno v: Applied Surface Science. 257:1437-1440

A gate insulator film with a wide bandgap and a high dielectric constant is required to achieve high-power field effect transistors (FET) using wide bandgap semiconductors such as SiC, GaN, and diamond. It is observed that an aluminum silicon oxide (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::99e01dbc4c7a3c3bd2122045b01f4fbd
https://doi.org/10.1016/j.apsusc.2010.08.063

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Characterization of Lanthanoid and Aluminum Based Oxide Film for Wide Bandgap Semiconductors

Autor: Keiko Masumoto, Naoyoshi Komatsu, Takashi Sugino, Chiharu Kimura, Hidemitsu Aoki, Masatomo Honjo

Publikováno v: Materials Science Forum. :3943-3948

A gate insulator film with a wide bandgap and a high dielectric constants required to achieve high power field effect transistor (FET) using wide bandgap semiconductors such as SiC and diamond. We can achieve to suppress the gate leakage current and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ec0671223e69068d0bf216fe6d8b5dcb
https://doi.org/10.4028/www.scientific.net/msf.638-642.3943

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Control of GaN crystal habit by solution stirring in the Na-flux method

Autor: Mihoko Maruyama, Masashi Yoshimura, Masayuki Imanishi, Daisuke Matsuo, Hiroki Imabayashi, Masatomo Honjo, Kosuke Nakamura, Yusuke Mori, Kosuke Murakami, Mamoru Imade

Publikováno v: Japanese Journal of Applied Physics. 56:01AD05

In our previous study, we succeeded in fabricating low-curvature GaN wafers with low dislocation density by the Na-flux coalescence growth technique. However, the crystals consisted of many pyramidal grains with facets, leading to an increase in the

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f5e5399663890c29df28a136e570ceac
https://doi.org/10.7567/jjap.56.01ad05

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Habit control during growth on GaN point seed crystals by Na-flux method

Autor: Hiroki Imabayashi, Mihoko Maruyama, Daisuke Matsuo, Masashi Yoshimura, Yusuke Mori, Kosuke Murakami, Kosuke Nakamura, Mamoru Imade, Masatomo Honjo, Masayuki Imanishi

Publikováno v: Japanese Journal of Applied Physics. 56:01AD01

The formation of the pyramidal habit is one of the requirements for the dramatic reduction of dislocations during growth on a tiny GaN seed called a “point seed”. In this study, we focus on controlling the growth habit to form a pyramidal shape i

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::016933e1f3e5492f524c2b024e736895
https://doi.org/10.7567/jjap.56.01ad01

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Crack-free GaN substrates grown by the Na-flux method with a sapphire dissolution technique

Autor: Mihoko Maruyama, Daisuke Matsuo, Masashi Yoshimura, Masayuki Imanishi, Masatomo Honjo, Hiroki Imabayashi, Mamoru Imade, Takumi Yamada, Yusuke Mori, Kosuke Murakami, Kosuke Nakamura

Publikováno v: Applied Physics Express. 9:071002

GaN wafers are generally fabricated by separating a foreign substrate from a GaN layer using thermal stress; however, thermal stress also leads to the cracking of the GaN layer. In this study, we first succeeded in dissolving a sapphire substrate jus

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a503e3ea60a9c488c71fde0806ccbd6a
https://doi.org/10.7567/apex.9.071002

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