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pro vyhledávání: '"Masato Zenitaka"'
Autor:
J. Tadano, Keisuke Yamamoto, R. Yamashiro, Kohei Hamaya, Dong Wang, Masato Zenitaka, Hiroshi Nakashima, Takeshi Kanashima, Hiroshi Nohira, Shinya Yamada
Publikováno v:
Materials Science in Semiconductor Processing. 70:260-264
Electrical properties of epitaxial La2O3/germanium (Ge) structures can be significantly improved by using epitaxially grown Lutetium(Lu)- or Yttrium(Y)-doped La2O3 passivation layers. For the metal-insulator-semiconductor (MIS) devices, hysteretic na
Publikováno v:
Journal of Applied Physics. 118:225302
We demonstrate a high-quality La2O3 layer on germanium (Ge) as an epitaxial high-k-gate-insulator, where there is an atomic-arrangement matching condition between La2O3(001) and Ge(111). Structural analyses reveal that (001)-oriented La2O3 layers wer