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pro vyhledávání: '"Masato Tabakomori"'
Autor:
Masato Tabakomori, Hideaki Ikoma
Publikováno v:
Japanese Journal of Applied Physics. 36:5409
N- and p-type Si were oxidized using an inductively coupled oxygen–argon mixed plasma at about 60°C and 300°C. The flow-rate ratio of O2 (O2(O2 + Ar)) was fixed at 80%. Capacitance–voltage (C–V) characteristics were improved by a combination
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd08093fd2599a9c176e9a5baff53ffb
https://doi.org/10.1143/jjap.36.5409
https://doi.org/10.1143/jjap.36.5409
Publikováno v:
Japanese Journal of Applied Physics. 36:L316
Si was oxynitrided with helicon-wave excited \Nii and Ar mixed plasma. The flow-rate ratio (\Nii :Ar) was kept constant (8:2). Oxynitridations were performed in two growth geometries in which plasma was either concentrated on the substrate or diverge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::828a9d9ac779c7d210f0c9056d2bbb01
https://doi.org/10.1143/jjap.36.l316
https://doi.org/10.1143/jjap.36.l316
Akademický článek
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Autor:
Shinjiro Kimura, Shinjiro Kimura, Tetsuya Ito, Tetsuya Ito, Masato Tabakomori, Masato Tabakomori, Yoshinaga Okamoto, Yoshinaga Okamoto, Hideaki Ikoma, Hideaki Ikoma
Publikováno v:
Japanese Journal of Applied Physics; March 1997, Vol. 36 Issue: 3 pL316-L316, 1p