Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Masato Shichijo"'
Publikováno v:
International Journal of Engineering and Innovative Technology. :1-7
We have studied the Light Addressable Amperometric Sensor (LAAS) which is a two dimensional electrochemical sensor. In this study we report the LAAS that enables multiples samples measurement based on planer structure made by photolithography. We dep
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f3a836d259048f103f5ddb83ce7873b
https://doi.org/10.51456/ijeit.2021.v10i08.001
https://doi.org/10.51456/ijeit.2021.v10i08.001
Publikováno v:
Electronics and Communications in Japan. 103:90-96
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b29bb0b782d9bb8cf3f4df6d85af308d
https://doi.org/10.1002/ecj.12270
https://doi.org/10.1002/ecj.12270
Autor:
Sanjeewa Dissanayake, Shinichi Takagi, T. Numata, Tsutomu Tezuka, N. Hirashita, Yoshihiko Moriyama, Naoharu Sugiyama, Masato Shichijo, Shu Nakaharai, Eiji Toyoda, Koji Usuda, Mitsuru Takenaka, T. Iisawa, Ryosho Nakane, Satoshi Sugahara
Publikováno v:
IEEE Trans. Electron Devices. 55(No. 1):21-39
An effective way to reduce supply voltage and resulting power consumption without losing the circuit performance of CMOS is to use CMOS structures using high carrier mobility/velocity. In this paper, our recent approaches in realizing these carrier-t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69674eaa87d5bbf158d2ffa9ec2a2e96
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100564106
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100564106
Publikováno v:
Japanese Journal of Applied Physics. 46:5930-5934
We report a new microchannel epitaxy (MCE) technique for forming III–V semiconductor on insulator (III–V-OI) structures on a Si substrate with a thermally oxidized SiO2 mask for high performance n-type metal–insulator–semiconductor field-effe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ef4d39a0acc8ffe60f0408e2166796e
https://doi.org/10.1143/jjap.46.5930
https://doi.org/10.1143/jjap.46.5930
Autor:
Toshinori Numata, Shu Nakaharai, Ryosho Nakane, Shinichi Takagi, Satoshi Sugahara, Masato Shichijo, Tsutomu Tezuka, Koji Usuda, Naoharu Sugiyama, Toshifumi Irisawa
Publikováno v:
Solid-State Electronics. 51(No. 4):526-536
Mobility enhancement technologies have currently been recognized as mandatory for future scaled MOSFETs. In this paper, the recent mobility enhancement technologies including application of strain and new channel materials such as SiGe, Ge and III–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c8f92f00bf7cc3422ccf49c771b1f4a9
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100534471
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100534471
Autor:
Masato Shichijo, Masakazu Sugiyama, Shinichi Takagi, Yoshiaki Nakano, Takuya Hoshii, Satoshi Sugahara, Mitsuru Takenaka, Momoko Deura
Publikováno v:
Extended Abstracts of the 2007 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36eca20a1440e5362e8c19d73dcd07ae
https://doi.org/10.7567/ssdm.2007.f-1-5
https://doi.org/10.7567/ssdm.2007.f-1-5
Autor:
Masato Shichijo, Hiroshi Kumagai, Hiroto Ishikawa, Shinichi Takagi, Satoshi Sugahara, Yasutaka Uchida, Takuya Hoshii
Publikováno v:
Extended Abstracts of the 2006 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89c723c4e5e3aca2c6174549c7bf09ae
https://doi.org/10.7567/ssdm.2006.j-6-2
https://doi.org/10.7567/ssdm.2006.j-6-2