Výsledky vyhledávání - "Masato Noborio"

Suppression of Bipolar Degradation in Deep-P Encapsulated 4H-SiC Trench MOSFETs up to Ultra-High Current Density

Autor: Shuhei Mitani, Junichi Uehara, Masato Noborio, Yuichi Takeuchi, Aiko Ichimura, Yasuhiro Ebihara, Kazuhiro Tsuruta

Publikováno v: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).

The bipolar degradation of Deep-p encapsulated 4H-SiC trench MOSFETs was investigated by using the pulse-current conduction system up to ultra-high current density. The fabricated MOSFETs exhibit the low hole injection compared with the PN diodes and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::380f8a1983902ac322f6182de87cc6b5
https://doi.org/10.1109/ispsd.2019.8757567

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Influences of coexisting O2 in H2O-annealing ambient on thermal oxidation kinetics and MOS interface properties on 4H–SiC (1–100)

Autor: Qiao Chu, Masato Noborio, Sumera Shimizu, Koji Kita

Publikováno v: Materials Science in Semiconductor Processing. 116:105147

On 4H–SiC (1–100) m-face substrate, the process design of SiO2 growth by a conventional thermal oxidation accompanied with post-oxidation annealing (POA) in H2O ambient was investigated, especially focusing on the impact of O2 or H2O composition

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::81ff0010eb7b4a5b070feb90446e1c99
https://doi.org/10.1016/j.mssp.2020.105147

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Deep-P encapsulated 4H-SiC trench MOSFETs with ultra low RonQgd

Autor: Shuhei Mitani, Yuichi Takeuchi, Masato Noborio, Toshimasa Yamamoto, Yasuhiro Ebihara, Aiko Ichimura, Shoji Mizuno, Kazuhiro Tsuruta

Publikováno v: 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Deep-P encapsulated 4H-SIC trench MOSFET was proposed. The fabricated MOSFET with a blocking voltage of 1800V demonstrated a ultra low RonQgd of 133 nCmΩ. The structure optimization was carried out for switching-loss reduction. The improved switchin

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f8d3599308f2682ebdef8218ca631f63
https://doi.org/10.1109/ispsd.2018.8393598

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4H-SiC MISFETs With 4H-AlN Gate Insulator Isopolytypically Grown on 4H-SiC $(11\bar{2}0)$

Autor: Jun Suda, Masahiro Horita, Tsunenobu Kimoto, Masato Noborio

Publikováno v: IEEE Electron Device Letters. 35:339-341

4H silicon carbide (4H-SiC) metal-insulator- semiconductor field-effect transistors (MISFETs) with 4H aluminum nitride (4H-AlN) gate insulators have been demonstrated. The 4H-AlN layers are isopolytypically grown on 4H-SiC (1120) by molecular-beam ep

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2cd3f70414f3de505f601e0800c278f8
https://doi.org/10.1109/led.2014.2299557

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Defect Control in Growth and Processing of 4H-SiC for Power Device Applications

Autor: Gan Feng, Masato Noborio, Jun Suda, Koutarou Kawahara, Tsunenobu Kimoto, Toru Hiyoshi

Publikováno v: Materials Science Forum. :645-650

Extended defects and deep levels generated during epitaxial growth of 4H-SiC and device processing have been reviewed. Three types in-grown stacking faults, (6,2), (5,3), and (4,4) structures, have been identified in epilayers with a density of 1-10

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d9eceee1494701384e27a1609179cd32
https://doi.org/10.4028/www.scientific.net/msf.645-648.645

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Electrical Characterization and Reliability of Nitrided-Gate Insulators for N- and P-Type 4H-SiC MIS Devices

Autor: Dethard Peters, Peter Friedrichs, Jun Suda, Michael Grieb, Anton J. Bauer, Masato Noborio, Tsunenobu Kimoto

Publikováno v: Materials Science Forum. :825-828

In this paper, nitrided insulators such as N2O-grown oxides, deposited SiO2 annealed in N2O, and deposited SiNx/SiO2 annealed in N2O on thin-thermal oxides have been investigated for realization of high performance n- and p-type 4H-SiC MIS devices. T

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1cbbdcb7ab5d92d43b7fa2b3fd419fac
https://doi.org/10.4028/www.scientific.net/msf.645-648.825

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Enhanced Drain Current of 4H-SiC MOSFETs by Adopting a Three-Dimensional Gate Structure

Autor: Hironori Yoshioka, T. Kimoto, Yuichiro Nanen, Masato Noborio, Jun Suda

Publikováno v: IEEE Transactions on Electron Devices. 56:2632-2637

4H-SiC (0001) metal-oxide-semiconductor field-effect transistors (MOSFETs) with a 3-D gate structure, which has a top channel on the (0001) face and side-wall channels on the {112macr0} face, have been fabricated. The 3-D gate structures with a 1-5-m

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9bb395c5a5cf51cbce10e4b1f5b8167
https://doi.org/10.1109/ted.2009.2030437

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