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pro vyhledávání: '"Masato Nashiki"'
Autor:
Wataru Saito, Yoshitaka Hokomoto, Hideyuki Ura, Masato Nashiki, Kenji Mii, Jun Onodera, Hiroaki Yamashita, Syotaro Ono
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
We discuss switching behavior of superjunction (SJ)-MOSFETs in terms of interaction between MOS gate structure and charge imbalance (CIB) of SJ structure. Resistive load switching behavior of SJ-MOSFET was analyzed by device simulation. CIB changes t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0c533b67ccebaa83019c2894e51c50
https://doi.org/10.1109/ispsd.2015.7123475
https://doi.org/10.1109/ispsd.2015.7123475
