Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Masato Hamatani"'
Autor:
Yuichi Shibazaki, Yasuhiro Iriuchijima, Hirotaka Kohno, Masato Hamatani, Jun Ishikawa, Junichi Kosugi
Publikováno v:
SPIE Proceedings.
Currently, it is considered that one of the most favorable options for the 32 nm HP node is pitch-splitting double patterning, which requires the lithography tool to achieve high productivity and high overlay accuracy simultaneously. In the previous
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b8b66a6a09aa42b1c1ddc8cc880dd71
https://doi.org/10.1117/12.846485
https://doi.org/10.1117/12.846485
Publikováno v:
SPIE Proceedings.
Double patterning (DP), an extension of immersion, is the leading contender for the manufacturing of 32 nm half pitch node devices. For DP, substantial improvement in overlay accuracy is required to meet the CDU requirements for the 32 nm node, and s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c43c74d8a0de4b099cc07fc16512814
https://doi.org/10.1117/12.837037
https://doi.org/10.1117/12.837037
Publikováno v:
SPIE Proceedings.
For 32 nm half-pitch node, double patterning is recognized as the most promising technology since some significant obstacles still remain in EUV in terms of technology and cost. This means much higher productivity and overlay performance will be requ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24e373ffd5ee3493071bb6406a9ef839
https://doi.org/10.1117/12.813386
https://doi.org/10.1117/12.813386
Publikováno v:
SPIE Proceedings.
VLSI chips are becoming denser and the industry is now moving to the development of devices at the 65nm node. While Nikon is working toward the development of next-generation lithography tools, we are also making efforts to extend the life of DUV exc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43fd9f7c3c320f8267a25c311dc34772
https://doi.org/10.1117/12.656349
https://doi.org/10.1117/12.656349
Autor:
Tomoyuki Matsuyama, Hisashi Nishinaga, Ken Ozawa, Toshiharu Nakashima, Masato Hamatani, Isao Mita, Boontarika Thunnakart, Yasushi Mizuno, Atsushi Someya, Tokihisa Kaneguchi
Publikováno v:
SPIE Proceedings.
For an ultra-high numerical aperture (NA), such as that exceeding 0.9, the p-polarized component of light that has passed through a region at the limit of the NA of a high-NA lithography tool, degrades contrast because of the so-called vector imaging
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20224f85d16282bb25e39970b2e74a2c
https://doi.org/10.1117/12.656242
https://doi.org/10.1117/12.656242
Publikováno v:
Optical Microlithography XVIII.
To meet shrinkage demands of device pattern size, a new platform ArF exposure tool , NSR-S308F, has been developed with an extremely high NA projection lens. This equipment has been developed not only for ensuring better imaging of dry ArF, but also
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af41619e76d2dc5754a4e20d9654b54c
https://doi.org/10.1117/12.599564
https://doi.org/10.1117/12.599564
Publikováno v:
SPIE Proceedings.
Nikon has developed cutting-edge lithography tools, and its product lineup encompasses all exposure wavelengths. They are: the NSR-S307E ArF scanner for the 90nm node; the NSR-S207D KrF scanner for the 110nm node; the NSR-SF130 i-line stepper for the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b56ad4ec597ef8dfcdbb45372d90c0a
https://doi.org/10.1117/12.537214
https://doi.org/10.1117/12.537214
Publikováno v:
SPIE Proceedings.
A real-time inspection is useful and effective to optimize lens aberrations of excimer-exposure sytem, which can expose patterns less than 100 nm. We have developed a portable i.e., compact and lightweight phase measuring interferometer (P-PMI), whic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::012b04e05c070dcb92a7efd89917fa4f
https://doi.org/10.1117/12.482699
https://doi.org/10.1117/12.482699
Autor:
Shinichi Okita, Tsuneyuki Hagiwara, Naoto Kondo, Masato Hamatani, Hideyuki Tashiro, Etsuya Morita
Publikováno v:
SPIE Proceedings.
The requirement for the higher resolution is pushing up the NA of the projection lens, so the DOF becomes shallower and the focus budget becomes tight. On the other hand, the requirement for the higher through-put is still demanding. To achieve the b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7215f34a77e45cb106a029d19c81b451
https://doi.org/10.1117/12.474628
https://doi.org/10.1117/12.474628
Autor:
Masato Hamatani, Tsuneyuki Hagiwara, Shunichi Higashibata, Koji Kaneko, Naoto Kondo, Kosuke Suzuki, Jiro Inoue, Hisashi Nishinaga
Publikováno v:
SPIE Proceedings.
To improve both the versatility and stability of leading edge wafer scanners, the functionality of an integrated aerial image sensor has been expanded. The system performance of current wafer scanners is a strong function of the quality of image form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb0a11a9896a26a215631ff81bbab26d
https://doi.org/10.1117/12.474637
https://doi.org/10.1117/12.474637