Zobrazeno 1 - 10
of 103
pro vyhledávání: '"Masataka Umeno"'
Autor:
Takuji Hosoi, Masataka Umeno, Yuki Okamoto, Daisuke Shimokawa, Osami Sakata, Heiji Watanabe, Tomoyuki Inoue, Takayoshi Shimura
Publikováno v:
ECS Transactions. 19:479-493
Thermal stability and the electron irradiation damage to the ordered structure in the thermal oxide on Si substrates are shown, together with the fundamentals of the quasi-amorphous structural model. The mechanism and rate enhancement of SiGe oxidati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3bf5f1b018a42ca2c98a3d763efc1d4a
https://doi.org/10.1149/1.3122111
https://doi.org/10.1149/1.3122111
Autor:
Masahiro Asakawa, Heiji Watanabe, Takayoshi Shimura, Hiroki Edo, Shigeru Kimura, Kohta Kawamura, Kiyoshi Yasutake, Osami Sakata, Satoshi Iida, Masataka Umeno, Kazunori Fukuda, Atsushi Ogura
Publikováno v:
Journal of Materials Science: Materials in Electronics. 19:189-193
Strained Si wafers made by layer transfer and Ge condensation methods were investigated by several X-ray diffraction techniques. From the reciprocal space map measurements, the angular distribution of the lattice plane was estimated to be 0.4°. X-ra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a87b4734ad8ce9c01a5ac9aedf71ef7a
https://doi.org/10.1007/s10854-008-9641-1
https://doi.org/10.1007/s10854-008-9641-1
Autor:
Kiyoshi Yasutake, Takayoshi Shimura, Kazunori Fukuda, Masataka Umeno, Satoshi Iida, Takayoshi Yoshida
Publikováno v:
Japanese Journal of Applied Physics. 45:6795-6799
The lattice undulation of a silicon-on-insulator (SOI) layer in bonded SOI wafers was observed by synchrotron white and monochromatic X-ray topographies. Pattern formation for white X-ray topography was discussed using the geometric relation among th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92566f73b2c9cfdf5cda142862b67080
https://doi.org/10.1143/jjap.45.6795
https://doi.org/10.1143/jjap.45.6795
Publikováno v:
Thin Solid Films. 476:125-129
The ordered SiO 2 in the buried oxide (BOX) layer of high-dose, low-dose, and internal-thermal-oxidation (ITOX) separation-by-implanted-oxygen (SIMOX) wafers was investigated by X-ray diffraction. From the results, it was found that the SiO 2 molecul
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c5981d3d3050a454c5718753ef974a7
https://doi.org/10.1016/j.tsf.2004.09.040
https://doi.org/10.1016/j.tsf.2004.09.040
Publikováno v:
The European Physical Journal Applied Physics. 27:439-442
Synchrotron X-ray topographs were taken for bonded silicon-on-insulator wafers. Under the grazing incident condition, the topographs of the top Si layer and the substrate are similar, which represent the variation in incident angle due to surface und
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80f36ea609e45e89ffe36916f74fa12f
https://doi.org/10.1051/epjap:2004067
https://doi.org/10.1051/epjap:2004067
Autor:
Takayoshi Shimura, Iwao Ohdomari, D. Yamasaki, Takanobu Watanabe, Masataka Umeno, Kosuke Tatsumura
Publikováno v:
Japanese Journal of Applied Physics. 43:492-497
Large-scale SiO2/Si(111) models were constructed by introducing oxygen atoms in c-Si models in an atom-by-atom manner. Molecular dynamics calculation at a constant temperature was repeatedly carried out for the growing oxide model. By comparing the o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd5609a718dd36f6c8fdaadcfe09ed4a
https://doi.org/10.1143/jjap.43.492
https://doi.org/10.1143/jjap.43.492
Autor:
Masataka Umeno, Takayoshi Shimura, Satoshi Kamei, Hiroyuki Hayashi, Yoshifumi Yoshioka, Tetsuya Ikuta
Publikováno v:
Japanese Journal of Applied Physics. 41:2262-2265
Ellipsometric measurements were applied to investigate Ge heteroepitaxial growth by molecular beam epitaxy on a Si(111) substrate, and the changes of optical constants and film thickness were monitored. Reflection high-energy electron diffraction (RH
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6680c88efbca19ca6004f5e46568d621
https://doi.org/10.1143/jjap.41.2262
https://doi.org/10.1143/jjap.41.2262
Publikováno v:
Journal of Crystal Growth. 236:37-40
The growth of epitaxially ordered SiO2 in oxygen-implanted silicon during thermal annealing was investigated. The implanted Si wafers were annealed for various durations at 1350°C. Diffraction streaks at 0.5 0.5 L (L∼1) of Si were observed from th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58747ae94de15c27f661b558db42de36
https://doi.org/10.1016/s0022-0248(01)02136-4
https://doi.org/10.1016/s0022-0248(01)02136-4
Publikováno v:
Solid State Phenomena. :485-490
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38b6504142ae1711bf9db913f890f9c9
https://doi.org/10.4028/www.scientific.net/ssp.82-84.485
https://doi.org/10.4028/www.scientific.net/ssp.82-84.485
Publikováno v:
Microelectronics Reliability. 41:1243-1253
The local cross-section electron-beam-induced-current (EBIC) technique together with a focused ion beam (FIB) for cross-sectional viewing is discussed. The cross-section formed by FIB treatment on the ultra-large scale integrated (ULSI) device surfac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f73988967acabb6009db63242cc1ed96
https://doi.org/10.1016/s0026-2714(01)00110-x
https://doi.org/10.1016/s0026-2714(01)00110-x