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Autor:
Masanori Hangyo, Hiroshi Harima, Kenji Kisoda, Eiji Kurimoto, Masataka Taneya, Kunihiro Takatani, Masaya Ishida
Publikováno v:
Japanese Journal of Applied Physics. 43:6988-6991
Ohmic contact formation on a p-GaN layer with a specific contact resistance of ρc=5×10-4 Ωcm2 has been achieved using a Pd/Mo electrode without the use of an alloying process. ρc was reduced to 2×10-4 Ωcm2 by annealing in vacuum at 500°C. The