Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Masataka Okawa"'
Autor:
Masataka Okawa, Ruito Aiba, Taiga Kanamori, Yusuke Kobayashi, Shinsuke Harada, Hiroshi Yano, Noriyuki Iwamuro
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 613-620 (2019)
In this paper, the authors report a unique short circuit failure mechanism of a 1.2 kV silicon carbide (SiC) SBD-wall-integrated trench MOSFET (SWITCH-MOS), using numerical simulations and experimental validation. When the Schottky barrier height in
Externí odkaz:
https://doaj.org/article/cb96e67fbd8848d5a24826b6b5c3856e
Autor:
Hiroshi Yano, Shinsuke Harada, Taiga Kanamori, Ruito Aiba, Yusuke Kobayashi, Noriyuki Iwamuro, Masataka Okawa
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 613-620 (2019)
In this paper, the authors report a unique short circuit failure mechanism of a 1.2 kV silicon carbide (SiC) SBD-wall-integrated trench MOSFET (SWITCH-MOS), using numerical simulations and experimental validation. When the Schottky barrier height in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0ceb9522aa2a81218c17d81e79733b8c
https://doi.org/10.1109/jeds.2019.2917563
https://doi.org/10.1109/jeds.2019.2917563
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In this study, the authors investigated residual damage in a 1.2 kV SWITCH-MOS after application of short-circuit stress. After the stress application, corresponding to about 80 % of the SWITCH-MOS withstanding time, the leakage current in the forwar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38a7ced5dd3ccc50a50c931e4e89c586
https://doi.org/10.1109/ispsd46842.2020.9170050
https://doi.org/10.1109/ispsd46842.2020.9170050
Autor:
Taiga Kanamori, Hiroshi Yano, Kevin Matsui, Masataka Okawa, Shinsuke Harada, Ruito Aiba, Noriyuki Iwamuro
Publikováno v:
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD).
In this study, we investigated dV DS /dt controllability on gate resistance (R g ) in a 1.2 kV SWITCH-MOS. In the case of large R g , the SWITCH-MOS showed roughly the same dV DS /dt as a conventional SiC trench MOSFET. However, in the case of small
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ea7512b40d33130ef1a8d0c3972e1b9
https://doi.org/10.1109/ispsd46842.2020.9170065
https://doi.org/10.1109/ispsd46842.2020.9170065
Autor:
Taiga Kanamori, Shinsuke Harada, Masataka Okawa, Hiroshi Yano, Yusuke Kobayashi, Noriyuki Iwamuro, Ruito Aiba
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
A 1.2kV silicon carbide (SiC) SBD-wall-integrated trench MOSFET (SWITCH-MOS) had been proposed and fabricated in order to solve body-PiN-diode related problems such as bipolar degradation and reverse recovery loss. In this paper, switching characteri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22338d409aa0f9b5a51d6d1a85b1049e
https://doi.org/10.1109/ispsd.2019.8757628
https://doi.org/10.1109/ispsd.2019.8757628
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
This paper is focused on the short-circuit capability and analysis of failure mechanism on relatively small DC power supply voltage for state-of-the-art 1.2 kV SiC trench MOSFETs. It is found that the gate-source SiO 2 rapture could be a failure mech
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94d779edd28b540e6b07568736f2f351
https://doi.org/10.1109/ispsd.2019.8757617
https://doi.org/10.1109/ispsd.2019.8757617