Zobrazeno 1 - 10 of 142 pro vyhledávání: '"Masashi Uematsu"'
1
Effects of Wet Ambient on Dry Oxidation Processes at 4H-SiC/SiO2 Interface: An Ab Initio Study
Autor: Masashi Uematsu, Toru Akiyama, Kohji Nakamura, Hiroyuki Kageshima, Tsunashi Shimizu, Tomonori Ito, Kenji Shiraishi
Publikováno v: ECS Transactions. 98:37-46
4H-SiC is a key material for applying in power electronics devices because of its superior physical properties. Furthermore, SiO2 oxide films which are crucial for manufacturing electronic devices such as metal-oxide-semiconductor field-effect transi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f1efb1bae8b23056445d032c0394997
https://doi.org/10.1149/09803.0037ecst
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3
Reaction of NO molecule at 4H-SiC/SiO2 interface: an ab initio study for the effect of NO annealing after dry oxidation
Autor: Tomonori Ito, Hiroyuki Kageshima, Masashi Uematsu, Tsunashi Shimizu, Kenji Shiraishi, Toru Akiyama, Kohji Nakamura
Publikováno v: Japanese Journal of Applied Physics. 60:SBBD10
The reaction of the NO molecule at the 4H-SiC/SiO2 interface after dry oxidation is theoretically investigated on the basis of ab initio calculations. On the Si-face, the reaction of the NO molecule results in the dissociation of the C–C single bon
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e83097bdcc169d34f5a50686397563d6
https://doi.org/10.35848/1347-4065/abdcb1
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4
Akademický článek
Observation of silicon self-diffusion enhanced by the strain originated from end-of-range defects using isotope multilayers.
Autor: Taiga Isoda, Masashi Uematsu, Itoh, Kohei M.
Publikováno v: Journal of Applied Physics; 2015, Vol. 118 Issue 11, p115706-1-115706-7, 7p, 1 Black and White Photograph, 7 Graphs
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5
Effect of fluorine on the suppression of boron diffusion in pre-amorphized silicon
Autor: Masashi Uematsu, Kohei M. Itoh, Ryotaro Kiga
Publikováno v: Journal of Applied Physics. 128:105701
The effect of fluorine (F) on diffusion of boron (B) in silicon (Si) is investigated by secondary ion mass spectrometry of Si, B, and F diffusion using pre-amorphized natSi/28Si isotope multilayers that are co-implanted with B and F. By the presence
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9aae69bbea5f5820d0cee0a2b452f227
https://doi.org/10.1063/5.0015405
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6
Ab initio calculations for the effect of wet oxidation condition on the reaction mechanism at 4H–SiC/SiO2 interface
Autor: Tomonori Ito, Tsunashi Shimizu, Abdul-Muizz Pradipto, Kenji Shiraishi, Kohji Nakamura, Hiroyuki Kageshima, Toru Akiyama, Masashi Uematsu
Publikováno v: Japanese Journal of Applied Physics. 59:SMMD01
The reaction of O2 molecule coexisting with wet oxidants such as H2O molecule and OH groups at 4H-SiC/SiO2 interface is investigated by performing ab initio calculations. Our calculations demonstrate characteristic features of the reaction depending
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::2624aecb6e28389e69e99382d30585fb
https://doi.org/10.35848/1347-4065/ab85dd
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7
Reaction mechanisms at 4H-SiC/SiO2interface during wet SiC oxidation
Autor: Hiroyuki Kageshima, Tomonori Ito, Masashi Uematsu, Kenji Shiraishi, Kohji Nakamura, Toru Akiyama, Shinsuke Hori
Publikováno v: Japanese Journal of Applied Physics. 57:04FR08
The reaction processes at the interface between SiC with 4H structure (4H-SiC) and SiO2 during wet oxidation are investigated by electronic structure calculations within the density functional theory. Our calculations for 4H-SiC/SiO2 interfaces with
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::478990baaae7d24b8f664090ae2e185c
https://doi.org/10.7567/jjap.57.04fr08
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8
Observation of Diffusion Behavior in Al-Implanted ZnO Single Crystal
Autor: Kenji Matsumoto, Isao Sakaguchi, Hajime Haneda, Naoki Ohashi, Tsubasa Nakagawa, Masashi Uematsu
Publikováno v: Key Engineering Materials. :197-200
Diffusion behaviors of aluminum (Al) in zinc-oxide (ZnO) single crystals were measured by means of ion implantation technique and SIMS depth profiling. It was found that Al concentration profile had a peculiar shape with a constant-concentration regi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::98c333fe29b76b2f2dcb633975d9e0e9
https://doi.org/10.4028/www.scientific.net/kem.421-422.197
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9
Probing the Behaviors of Point Defects in Silicon and Germanium Using Isotope Superlattices
Autor: Yasuhiro Shiraki, Kentarou Sawano, Masashi Uematsu, Eugene E. Haller, Kohei M. Itoh, Miki Naganawa, Yasuo Shimizu
Publikováno v: ECS Transactions. 25:51-54
In order to probe the fundamental behaviors of point defects in silicon and germanium, we studied the self-diffusion using isotope superlattices. In ion-implanted germanium, vacancies are in thermal equilibrium and transient enhanced diffusion is not
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0923cbecc03211a3e180a0f7492dc87b
https://doi.org/10.1149/1.3204393
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10
Stress Dependence of Oxidation Reaction at SiO2/Si Interfaces during Silicon Thermal Oxidation
Autor: Hiroyuki Kageshima, Masashi Uematsu, Tomonori Ito, Toru Akiyama
Publikováno v: Japanese Journal of Applied Physics. 47:7089-7093
The microscopic processes of interfacial reaction of O2 molecules involving compressive stress normal to SiO2/Si(001) interface are investigated by first-principles total-energy calculations. It is found that the energy barrier height for the O2 reac
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3c59e70e38f5e0a4fe22e66b24e46b9c
https://doi.org/10.1143/jjap.47.7089
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