Zobrazeno 1 - 10
of 33
pro vyhledávání: '"Masashi Nakabayashi"'
Publikováno v:
TEION KOGAKU (Journal of Cryogenics and Superconductivity Society of Japan). 54:374-380
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1de4604790d7a0d5b5e7a56f22537d81
https://doi.org/10.2221/jcsj.54.374
https://doi.org/10.2221/jcsj.54.374
Autor:
Shohji Ushio, Tani Komomo, Tatsuo Fujimoto, Masashi Nakabayashi, Shinya Sato, Hiroshi Tsuge, Masakazu Katsuno
Publikováno v:
ECS Transactions. 75:155-161
Accurate control of the growth conditions, specifically in view of the temperature field, is more important as the diameter of SiC single crystals becomes larger. The temperature field during the physical vapor transport (PVT) growth inevitably induc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c685b732d113ab93a2a9575a9cdb4854
https://doi.org/10.1149/07512.0155ecst
https://doi.org/10.1149/07512.0155ecst
Autor:
Masashi Nakabayashi, Tatsuo Fujimoto, Shoji Ushio, Shinya Sato, Masakazu Katsuno, Takayuki Yano, Tani Komomo, Hiroshi Tsuge
Publikováno v:
Materials Science Forum. 858:97-100
Structural transformation from threading screw dislocations (TSDs) to stacking faults (SFs) has been investigated for PVT-grown 4H-SiC single crystals using X-ray topography and transmission electron microscopy (TEM). The transformation of TSDs is in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::449f401cc3df74450b58f5fe8f3ba924
https://doi.org/10.4028/www.scientific.net/msf.858.97
https://doi.org/10.4028/www.scientific.net/msf.858.97
Autor:
Masashi Nakabayashi, Kozo Abe, Kohta Shimomura, Hiroshi Tsuge, Kiyoshi Kojima, Tatsuo Fujimoto
Publikováno v:
Materials Science Forum. :453-456
The room temperature residual stress of 4H-SiC wafers has been investigated using a precise X-ray diffraction method. A large strain was observed for the circumferential direction of wafers, more than ten times larger than those measured along the pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::103d57f1ab6ac8b9569b39b14d946eda
https://doi.org/10.4028/www.scientific.net/msf.778-780.453
https://doi.org/10.4028/www.scientific.net/msf.778-780.453
Autor:
Takayuki Yano, Masakazu Katsuno, Shinya Sato, Masashi Nakabayashi, Tatsuo Fujimoto, Hiroshi Tsuge, Noboru Ohtani
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:N3018-N3021
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5c2ebb0f3dc3b4215669ba6759c7b54
https://doi.org/10.1149/2.004308jss
https://doi.org/10.1149/2.004308jss
Autor:
Masakazu Katsuno, Shoji Uhsio, Tatsuo Fujimoto, Masashi Nakabayashi, Hiroshi Tsuge, Tani Komomo, Shinya Sato, Takayuki Yano, Hosei Hirano, Hirokastu Yashiro
Publikováno v:
Advances in Solid Oxide Fuel Cells and Electronic Ceramics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84e12b7044aa2e3738f696c879d44361
https://doi.org/10.1002/9781119211501.ch12
https://doi.org/10.1002/9781119211501.ch12
Autor:
Wataru Ohashi, Hirokatsu Yashiro, Tatsuo Fujimoto, Masakazu Katsuno, Takashi Aigo, Taizo Hoshino, Hiroshi Tsuge, S. Satoh, Hosei Hirano, Masashi Nakabayashi
Publikováno v:
Materials Science Forum. :319-322
Time-dependent evolutions of single and quadruple Shockley stacking faults (sSSF and 4SSF) in 4° off 4H-SiC epitaxial layers have been investigated. UV illuminations using an Hg-Xe lamp light source generate dissociations of basal plane dislocations
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40d7e5786966ae766b07a69320eab1da
https://doi.org/10.4028/www.scientific.net/msf.645-648.319
https://doi.org/10.4028/www.scientific.net/msf.645-648.319
Autor:
Tatsuo Fujimoto, Wataru Ohashi, Noboru Ohtani, Takashi Aigo, Hirokatsu Yashiro, Masakazu Katsuno, Masashi Nakabayashi, Hosei Hirano, Taizo Hoshino, Hiroshi Tsuge
Publikováno v:
Materials Science Forum. :311-314
Dislocations in highly nitrogen-doped (N > 1×1019 cm-3) low-resistivity ( < 10 mcm) 4H-SiC substrates were investigated by photoluminescence imaging, synchrotron X-ray topography, and defect selective etching using molten KOH. The behavior of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18bc60a129f5e6fc99e1da33f86d2467
https://doi.org/10.4028/www.scientific.net/msf.645-648.311
https://doi.org/10.4028/www.scientific.net/msf.645-648.311
Autor:
Taizo Hoshino, Tatsuo Fujimoto, Hirokatsu Yashiro, Wataru Ohashi, Takashi Aigo, Masakazu Katsuno, Masashi Nakabayashi, Hiroshi Tsuge
Publikováno v:
Materials Science Forum. :119-122
The epitaxial growth process was optimized in order to obtain good surface morphology for epilayers grown on 4˚ off-axis substrates. The optimization was carried out from growth temperatures and gas chemistry including C/Si ratio. Step-bunching was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7da811e4c80d65f1f3021ebdbb31ab10
https://doi.org/10.4028/www.scientific.net/msf.645-648.119
https://doi.org/10.4028/www.scientific.net/msf.645-648.119
Autor:
Tatsuo Fujimoto, Hiroshi Tsuge, Kohei Tatsumi, Noboru Ohtani, Hosei Hirano, Takashi Aigo, Taizo Hoshino, Hirokatsu Yashiro, Masakazu Katsuno, Masashi Nakabayashi
Publikováno v:
Journal of Crystal Growth. 311:1475-1481
Heavily nitrogen-doped n + 4H–SiC single crystals were grown by the physical vapor transport (PVT) method. The nitrogen incorporation kinetics in a heavily doped regime was studied in terms of growth temperature dependence, and it was revealed that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::26f14ce26aef43b729f2bbd8bb8d170d
https://doi.org/10.1016/j.jcrysgro.2009.01.119
https://doi.org/10.1016/j.jcrysgro.2009.01.119