Zobrazeno 1 - 10
of 109
pro vyhledávání: '"Masashi Kumagawa"'
Autor:
Takuya Hikida, Akiko Konno, Yoshimi Momose, K. Arafune, N. Murakami, Tadanobu Koyama, Tetsuo Ozawa, Masafumi Miyazawa, Yasuhiro Hayakawa, Masashi Kumagawa
Publikováno v:
Journal of Crystal Growth. 310:1433-1437
The paper describes the method to grow homogeneous InxGa1−xSb ternary alloy bulk crystals. The InxGa1−xSb crystals were grown under a constant temperature gradient using InSb(seed)/Te-doped InSb/GaSb(feed) samples. The optimum cooling rate to gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d842a1b8d8838846d7cad02dc96ba1e2
https://doi.org/10.1016/j.jcrysgro.2007.11.067
https://doi.org/10.1016/j.jcrysgro.2007.11.067
Autor:
P. Jayavel, Yasuhiro Hayakawa, Masashi Kumagawa, Y Kobayashi, S. Nakamura, Tadanobu Koyama, K. Arafune
Publikováno v:
Semiconductor Science and Technology. 20:1064-1067
We have investigated the structural and electrical properties of InAsxSb1−x epilayers grown on GaAs(0 0 1) substrates by hot wall epitaxy. The epilayers were grown on an InAsSb graded layer and an InSb buffer layer. The arsenic composition (x) of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aa2fea3653e70d8e9528106b2810ee1
https://doi.org/10.1088/0268-1242/20/10/013
https://doi.org/10.1088/0268-1242/20/10/013
Publikováno v:
Journal of Crystal Growth. 280:26-31
We have investigated the crystalline quality of InAsxSb1−x epilayers grown on Sb-rich InAsSb buffer layer and on GaAs (0 0 1) substrates by hot wall epitaxy (HWE). The epilayers are grown at different arsenic (As) temperatures of 250, 270 and 280
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a36274ad85c4cd05db445eb1793ac99
https://doi.org/10.1016/j.jcrysgro.2005.03.026
https://doi.org/10.1016/j.jcrysgro.2005.03.026
Autor:
Le. H. Dao, Sadik Dost, Tetsuo Ozawa, Yoshimi Momose, N. Murakami, Yasunori Okano, Tadanobu Koyama, Masashi Kumagawa, Yasuhiro Hayakawa, Koji Arafune
Publikováno v:
Scopus-Elsevier
The effect of gravity on dissolution of GaSb in InSb melt and growth of InGaSb was experimentally investigated. Experiments were carried out in a GaSb(seed)/InSb/GaSb(feed) sandwich system under an imposed temperature gradient. In the experiments, th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4723e6051bb1b5946fcaf257ed4f4365
https://doi.org/10.1007/bf02945952
https://doi.org/10.1007/bf02945952
Publikováno v:
Journal of Crystal Growth. 275:e931-e935
In order to study the effect of pyramidal structure in reducing dislocations in mismatched heteroepitaxy, pyramidal In0.06Ga0.94Sb epilayers with mirror-like {1 1 1} facets were grown on two kinds of GaSb (0 0 1) circular patterned substrates by liqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30c09b720511f177f537b0066774ee14
https://doi.org/10.1016/j.jcrysgro.2004.11.096
https://doi.org/10.1016/j.jcrysgro.2004.11.096
Publikováno v:
Journal of Crystal Growth. 274:362-366
We have studied the structural and electrical characteristics of InAsSb ternary layers grown on GaAs (0 0 1) substrates by hot wall epitaxy at arsenic (As) reservoir temperature in the range from 220 to 290 °C. The growth rate of the epilayer is fou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22dcba57a4b1ce75900d0ef2305f8411
https://doi.org/10.1016/j.jcrysgro.2004.10.054
https://doi.org/10.1016/j.jcrysgro.2004.10.054
Autor:
N. Murakami, T. Suzuki, Masashi Kumagawa, Tetsuo Ozawa, K. Arafune, Yasuhiro Hayakawa, Yasunori Okano
Publikováno v:
Journal of Crystal Growth. 275:e1507-e1512
A numerical analysis has been carried out to clarify the effect of gravity level and the cooling rate on the growth interface shape and supercooling. A horizontal sandwich model of GaSb/In–Ga–Sb/GaSb combination has been used, where GaSb is in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58831f2a4271edd6d9a3e0ab56710b2c
https://doi.org/10.1016/j.jcrysgro.2004.11.183
https://doi.org/10.1016/j.jcrysgro.2004.11.183
Publikováno v:
Journal of Crystal Growth. 263:320-326
The effect of gravitational direction on the dissolution of GaSb crystal into InSb melt and the growth of InGaSb was investigated using GaSb(seed)/InSb/GaSb(feed) sandwich sample under a constant temperature gradient. In 0.03 Ga 0.97 Sb crystal was g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::345c4afc7785f525e5691eec74fe8d90
https://doi.org/10.1016/j.jcrysgro.2003.11.068
https://doi.org/10.1016/j.jcrysgro.2003.11.068
Publikováno v:
Journal of Crystal Growth. 256:243-247
Pyramidal structured gallium antimonide epilayers with mirror-like {1 0 0} and {1 1 1} facets were grown on GaSb(1 0 0) patterned substrates by liquid phase epitaxy. The {1 1 1} facets were identified as two different faces: (1 1 1) and ( 1 1 1 ) . S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b501682b2d73a02dee20b4ad8f006de
https://doi.org/10.1016/s0022-0248(03)01364-2
https://doi.org/10.1016/s0022-0248(03)01364-2
Publikováno v:
Numerical Heat Transfer, Part A: Applications. 43:31-46
The role of natural convection in the melting of a GaSb/InSb/GaSb sandwich system was numerically investigated. The melting process was assumed unsteady, and the governing equations of the model were solved by the finite difference method using a bou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fc5e51657d7d25b13403a8b0cdf816a
https://doi.org/10.1080/10407780307304
https://doi.org/10.1080/10407780307304