Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Masashi Ataka"'
Seamless long line and space pattern fabrication for nanoimprint mold by using electron beam stepper
Publikováno v:
Microelectronic Engineering. 88:2074-2078
Nanoimprint lithography (NIL) is a simple process to fabricate nanostructure devices with high throughput and low cost. The mold fabrication process is an important factor to improve NIL technology. Adopting a seamless pattern mold fabrication proces
Autor:
Makoto Okada, Kaori Yanagihara, Takashi Kishiro, Norimichi Anazawa, Shinji Matsui, Masashi Ataka
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28:740-743
The nanoimprint molds are usually fabricated by electron beam (EB) lithography. In recent years, a large-area mold fabrication with a high throughput is required to use nanoimprint lithography to produce devices in mass production. Using a convention
Autor:
Masashi Ataka, Norimichi Anzawa, Makoto Okada, Shinji Matsui, Kaori Yanagihara, Takashi Kishiro
Publikováno v:
Journal of Photopolymer Science and Technology. 23:75-78
Publikováno v:
SPIE Proceedings.
The optical inspection system has been applied for mask inspection. The small but fatal detects on the mask can not be detected minutely by the optical system because of the limitations of optical resolution. We have developed the Defect Imaging Syst
Publikováno v:
SPIE Proceedings.
For evaluation of high-end photomasks for under 65 nm design rule wafers, Holon has developed EMU-Navi, optional software for Holon EMU-series mask Critical Dimension Scanning Electron Microscope (CD-SEM), which helps automated and accurate CD measur
Autor:
Hitomi Satoh, Izumi Santo, Masashi Ataka, Katsuyuki Takahashi, Naoyuki Nakamura, Norimichi Anazawa, Yasunobu Kitayama
Publikováno v:
SPIE Proceedings.
Recently, in Critical Dimension (CD) measurement on high-end masks, Optical Proximity Correction (OPC) pattern measurement is on increase and it has become important to measure angled lines. In CD searching on a CAD layout viewer, the exact CD values
Publikováno v:
SPIE Proceedings.
Rapid changes in the feature size of photo masks have made it clear that there is an obvious limitation to the use of optical measurement tools, and mask makers now have the necessity to use CD-SEMs as a measurement tool for forefront patterns. The l
Publikováno v:
SPIE Proceedings.
We evaluated an advanced CD-SEM as a photomask CD guarantee tool. Measurement repeatability was 2.3 nm (3 (sigma) ) for each measurement, and reproducibility (the range of average value in 5 days) is 3 nm. Contamination effect was evaluated by measur
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19:1264
Advanced critical dimension (CD)-scanning electron microscope was evaluated as a photomask CD guarantee tool. Measurement repeatability was 2.3 nm (3σ) for each measurement, and reproducibility (range of average value in five days) was 3 nm. The con
Conference
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