Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Masaru Zaitsu"'
Publikováno v:
Crystal Growth & Design.
Publikováno v:
ECS Transactions. 98:177-184
SiGe thin films, such as hydrogenated amorphous silicon germanium (a-SiGe:H) and hydrogenated microcrystalline silicon germanium (μc-SiGe:H), are formed by plasma enhanced chemical vapor deposition (PECVD) methods from SiH4, GeH4, and H2. Thin film
Publikováno v:
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
We simulated the growth of SiGe alloys by using reactive force-field (ReaxFF) molecular dynamics simulations in binary systems of SiH x and GeH x and identify the effect of gaseous species on the compositions and crystallinity in alloys. The composit
Publikováno v:
Computational Materials Science. 204:111193
Publikováno v:
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
In order to form a SiGe thin film by chemical vapor deposition (CVD) with a suitable quality for advanced devices, the relationships between materials/process and structure/composition are needed to be clarified at the atomic level. We simulated SiGe
Publikováno v:
ECS Transactions. 77:25-28
Plasma processes for atomic scale deposition and etching are required for nanoscale devices such as Fin-field effect transistors (FETs), nanowires, 3D NAND-type flash memory units, and others 3D devices. To achieve high performance of such nanoscale
Publikováno v:
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
We calculate a deposition process of hydrogenated amorphous silicon (a-Si:H) films on a silicon (100) substrate by reactive force-field molecular dynamics simulations. The influences of (a) substrate temperatures and (b) coverage of hydrogen atoms on
Publikováno v:
IEICE Transactions on Electronics. :731-735
Integrated InP polarization converters based on half-ridge structure are studied numerically. We demonstrate that the fabrication tolerance of the half-ridge structure can be extended significantly by introducing a slope at the ridge side and optimiz
Publikováno v:
The Proceedings of Mechanical Engineering Congress, Japan. 2019:J05411
Autor:
Yasuaki Hashizume, Tomofumi Oyama, Takuo Tanemura, Yoshiaki Nakano, Masaru Zaitsu, Shinji Mino, Myung-Joon Kwack
Publikováno v:
IEICE Transactions on Electronics. :738-743