Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Masaru Izumisawa"'
Autor:
Hiroaki Yamashita, Takenori Yasuzumi, Wataru Saito, Masataka Tsuji, Masaru Izumisawa, Syotaro Ono, Hisao Ichijo
Publikováno v:
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).
Novel superjunction (SJ)-MOSFET structure with distributed internal snubber area is proposed. RC network composed by gate electrode, oxide and P-type pillar provides frequency-dependent capacitive coupling between each terminal. The snubber area acts
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c395cda3634bd3db13b39523d6011bf4
https://doi.org/10.1109/ispsd.2018.8393595
https://doi.org/10.1109/ispsd.2018.8393595
Autor:
Shigeo Koduki, Satoshi Aida, T. Ogura, Ichiro Omura, Wataru Saito, Hironori Yoshioka, Masaru Izumisawa
Publikováno v:
IEEE Transactions on Electron Devices. 52:2317-2322
Si-MOSFETs with the breakdown voltage of over 1000 V were demonstrated, for the first time, realizing low on-resistance below the theoretical Si limit. The fabricated MOSFETs have a semi-superjunction (SemiSJ) structure, which is the combination of a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f6858e05c91462b173ca209a4b75afb
https://doi.org/10.1109/ted.2005.856804
https://doi.org/10.1109/ted.2005.856804
Publikováno v:
IEEE Transactions on Electron Devices. 50:1801-1806
A new superjunction (SJ) structure offering remarkable advantages compared with the conventional SJ structure is proposed and demonstrated for a power-switching device. In the proposed structure (semi-SJ structure), an n-doped layer is connected to t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b274afc4926490a02c0400af477cfa40
https://doi.org/10.1109/ted.2003.815126
https://doi.org/10.1109/ted.2003.815126
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
A new MOS-gate structure was proposed and demonstrated to improve the switching trade-off characteristics between noise and loss in high-voltage MOSFETs. The lightly p-doped dummy base layer under the gate electrode modulates C gd -V ds curve due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b11a1ece629906eff94becb67567bbfc
https://doi.org/10.1109/ispsd.2011.5890854
https://doi.org/10.1109/ispsd.2011.5890854
Autor:
Masakazu Yamaguchi, Kenichi Tokano, Syotaro Ono, Wataru Saito, Masataka Tsuji, Yasuto Sumi, Masaru Izumisawa, S. Kurushima
Publikováno v:
2008 20th International Symposium on Power Semiconductor Devices and IC's.
We investigated the profile dependency of specific on-resistance (RonA) under high- temperature and high-current-density conditions for 600 V-class semi-superjunction MOSFETs fabricated by the double-ion-implantation and multi-epitaxial method, for t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec98c2647f71b5df78b302bd05f55318
https://doi.org/10.1109/ispsd.2008.4538923
https://doi.org/10.1109/ispsd.2008.4538923
Autor:
Shigeo Koduki, Hironori Yoshioka, Hideki Okumura, Satoshi Aida, Masakazu Yamaguchi, Wataru Saito, Masaru Izumisawa, Ichiro Omura, T. Ogura
Publikováno v:
2006 IEEE International Symposium on Power Semiconductor Devices & IC's.
Si-MOSFETs with the breakdown voltage of 680 V and the specific on-resistance of 15.5 mOmegacm2 were demonstrated by the superjunction (SJ) structure. The lateral pitch for the SJ structure was narrowed to 12 mum for the on-resistance reduction. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a9ee5bdb2658d96d1d36d5502122b1b
https://doi.org/10.1109/ispsd.2006.1666129
https://doi.org/10.1109/ispsd.2006.1666129
Autor:
Satoshi Aida, Hironori Yoshioka, Ichiro Omura, Masaru Izumisawa, T. Ogura, Wataru Saito, Shigeo Koduki
Publikováno v:
Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005..
Si-MOSFETs with the breakdown voltage of over 1000 V were demonstrated, for the first time, realizing low on-resistance below the theoretical Si-limit. The fabricated MOSFETs have semi-superjunction (SemiSJ) structure, which is the combination of sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::406e6fcfbeeeb37eee6cd4bd6c98df1f
https://doi.org/10.1109/ispsd.2005.1487942
https://doi.org/10.1109/ispsd.2005.1487942
Publikováno v:
ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings..
New superconjunction (SJ) structure is proposed and demonstrated for the power-switching device with remarkable advantage over conventional SJ structure. An n-doped layer is connected to the bottom of the SJ structure for the proposed structure. It i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bdd53abb28a424e49264e17790ab6561
https://doi.org/10.1109/ispsd.2003.1225227
https://doi.org/10.1109/ispsd.2003.1225227