Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Masao Hishikawa"'
Autor:
Masao Hishikawa, Takashi Matsumoto, Shuhei Konaka, Yoichi Nabetani, Fumiaki Iwasaki, Kazuharu Uchiyama, Akira Ishikawa, Tsutomu Muranaka, Sakyo Fukasawa, Kiyoshi Kobayashi, Hirokazu Hori
Publikováno v:
physica status solidi c. 11:1244-1247
Excitation transfer in semiconductor nanostructure is an elemental process of next generation optoelectronic devices. Energy relaxation process in exciton transfer from the lowest state of a quantum well to the lowest state of the next well was studi
Autor:
Yoichi Nabetani, Masao Hishikawa, Sakyo Fukasawa, Fumiaki Iwasaki, Takashi Matsumoto, Tsutomu Muranaka
Publikováno v:
physica status solidi c. 10:1152-1155
Four-quantum-well structure consisting of a ZnCdMnSe diluted magnetic semiconductor (DMS) well and three ZnCdSe non-magnetic semiconductor (NMS) wells separated by 15 nm-thick ZnSe barrier layers were prepared by using ALE and MBE technique. The samp
Autor:
Kenta Ohmori, Masao Hishikawa, Kazuki Kodama, Yoichi Nabetani, Tsutomu Muranaka, Takashi Matsumoto, Suguru Iizuka
Publikováno v:
physica status solidi c. 7:1648-1650
The ZnSe-based mesa structures with well-defined and smooth facets were successfully demonstrated by using molecular beam epitaxy (MBE) and wet chemical etching. The ZnSe structures were found to be bound by (111) and (-1-11) facets along the [-110]
Autor:
Tsutomu Muranaka, Masao Hishikawa, Takashi Matsumoto, Kenta Ohmori, Fumiaki Iwasaki, Yoichi Nabetani, Kazuki Kodama, Sakyo Fukasawa
Publikováno v:
Japanese Journal of Applied Physics. 50:05FC13
Double quantum well (DQW) structures consisting of a ZnCdSe well and a ZnCdMnSe well separated by a ZnSe barrier are grown with molecular beam epitaxy (MBE). The DQW structures are characterized by using X-ray diffraction measurement and simulation.
Publikováno v:
The Journal of Biochemistry. 40:383-386
Publikováno v:
Proceedings of the Japan Academy. 29:143-147